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| 型号： | IRF7603TR |
| 厂商： | International Rectifier |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 5.6A MICRO8 |
| 产品目录绘图： | IR Hexfet Micro-8 |
| 标准包装： | 1 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 35 毫欧 @ 3.7A，10V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 27nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 520pF @ 25V |
| 功率 - 最大： | 1.8W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSSOP，8-MSOP（0.118"，3.00mm 宽） |
| 供应商设备封装： | Micro8? |
| 包装： | 标准包装 |
| 产品目录页面： | 1523 (CN2011-ZH PDF) |
| 其它名称： | IRF7603DKR |
PD - 9.1262D
IRF7603
HEXFET ? Power MOSFET
l
l
Generation V Technology
Ultra Low On-Resistance
S
1
8
A
A
D
l
l
l
l
l
N-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
S
S
G
2
3
4
7
6
5
D
D
D
V DSS = 30V
R DS(on) = 0.035 ?
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The new Micro8 package, with half the footprint area of the
standard SO-8, provides the smallest footprint available in
an SOIC outline. This makes the Micro8 an ideal device for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro8 will allow
it to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
T o p V ie w
Micro8
Parameter
Max.
Units
I D @ T A = 25°C
Continuous Drain Current, V GS @ 10V
5.6
I D @ T A = 70°C
I DM
P D @T A = 25°C
V GS
dv/dt
T J, T STG
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current ?
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ?
Junction and Storage Temperature Range
4.5
30
1.8
14
± 20
5.0
-55 to + 150
A
W
mW/°C
V
V/ns
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JA
Maximum Junction-to-Ambient ?
–––
70
°C/W
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
8/25/97
相关PDF资料 |
PDF描述 |
|---|---|
| IRF7604TRPBF | MOSFET P-CH 20V 3.6A MICRO8 |
| IRF7604TR | MOSFET P-CH 20V 3.6A MICRO8 |
| IRF7607 | MOSFET N-CH 20V 6.5A MICRO-8 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF7603TRHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 5.6A 8-Pin Micro T/R |
| IRF7603TRPBF | 功能描述:MOSFET MOSFT 30V 5.6A 35mOhm 18nC Micro 8 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7604 | 制造商:International Rectifier 功能描述:MOSFET P MICRO-8 |
| IRF7604HR | 制造商:International Rectifier 功能描述:MOSFET, P-CHANNEL, -20V, -3.6A, 90 MOHM, 13 NC QG, MICRO 8 - Rail/Tube |
| IRF7604PBF | 制造商:International Rectifier 功能描述:MOSFET P MICRO-8 制造商:International Rectifier 功能描述:MOSFET, P, MICRO-8 |
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