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| 型号： | IRF7807VD2PBF |
| 厂商： | International Rectifier |
| 文件页数： | 3/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 8.3A 8-SOIC |
| 标准包装： | 95 |
| 系列： | FETKY™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 8.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 25 毫欧 @ 7A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 14nC @ 4.5V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 管件 |
IRF7807VD2PbF
Power MOSFET Selection for DC/DC
Converters
Control FET
Drain Current
4
Special attention has been given to the power losses
in the switching elements of the circuit - Q1 and Q2.
1
Gate Voltage
Power losses in the high side switch Q1, also called
the Control FET, are impacted by the R ds(on) of the
MOSFET, but these conduction losses are only about
one half of the total losses.
t1
V GTH
t2
t3
Power losses in the control switch Q1 are given
by;
t0
2
Drain Voltage
P loss = P conduction + P switching + P drive + P output
This can be expanded and approximated by;
× V in × f ?
P loss = ( I rms 2 × R ds(on) )
? Q gd ? ?
+ ? I × × V in × f ? + ? I ×
? i g ? ?
Q gs 2
i g
?
?
Figure 1: Typical MOSFET switching waveform
Synchronous FET
The power loss equation for Q2 is approximated
by;
× V in × f ?
? Q oss
? 2
?
P loss = P conduction + P drive + P output
( )
P loss = I rms × R ds(on)
+ ? oss × V in × f + ( Q rr × V in × f )
+ ( Q g × V g × f )
+
This simplified loss equation includes the terms Q gs2
and Q oss which are new to Power MOSFET data sheets.
Q gs2 is a sub element of traditional gate-source
charge that is included in all MOSFET data sheets.
The importance of splitting this gate-source charge
into two sub elements, Q gs1 and Q gs2 , can be seen from
Fig 1.
Q gs2 indicates the charge that must be supplied by
the gate driver between the time that the threshold
voltage has been reached (t1) and the time the drain
current rises to I dmax (t2) at which time the drain volt-
age begins to change. Minimizing Q gs2 is a critical fac-
tor in reducing switching losses in Q1.
Q oss is the charge that must be supplied to the out-
put capacitance of the MOSFET during every switch-
ing cycle. Figure 2 shows how Q oss is formed by the
parallel combination of the voltage dependant (non-
linear) capacitance’s C ds and C dg when multiplied by
the power supply input buss voltage.
www.irf.com
2
+ ( Q g × V g × f )
? Q ?
? 2 ?
*dissipated primarily in Q1.
*
3
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相关代理商/技术参数 |
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| IRF7807VD2TR | 功能描述:MOSFET N-CH 30V 8.3A 8-SOIC RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:FETKY™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRF7807VD2TRPBF | 功能描述:MOSFET MOSFT w/Schttky 30V 8.3A 25mOhm 9.5nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7807VPBF | 功能描述:MOSFET 30V 1 N-CH HEXFET 25mOhms 9.5nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7807VTR | 功能描述:MOSFET N-CH 30V 8.3A 8-SOIC RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRF7807VTRPBF | 功能描述:MOSFET MOSFT 30V 8.3A 25mOhm 9.5nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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