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参数资料
| 型号： | IRF7809ATR |
| 厂商： | International Rectifier |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 14.5A 8-SOIC |
| 标准包装： | 4,000 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 14.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 8.5 毫欧 @ 15A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 75nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 7300pF @ 16V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 带卷 (TR) |
PD - 93810
PD - 93811
IRF7809A/IRF7811A
PROVISIONAL DATASHEET
?
?
?
N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
HEXFET ? Chipset for DC-DC Converters
?
?
Low Switching Losses
Minimizes Parallel MOSFETs for high current
S
1
8
A
A
D
applications
Description
These new devices employ advanced HEXFET ? Power
MOSFET technology to achieve an unprecedented balance
of on-resistance and gate charge. The reduced conduction
and switching losses make them ideal for high efficiency
SO-8
S
S
G
2
3
4
T o p V ie w
7
6
5
D
D
D
DC-DC converters that power the latest generation of
microprocessors.
Both the IRF7809A and IRF7811A have been optimized
and are 100% tested for all parameters that are critical in
DEVICE RATINGS
synchronous buck converters including R DS(on) , gate charge
and Cdv/dt-induced turn-on immunity. The IRF7809A offers
particulary low R DS(on) and high Cdv/dt immunity for
synchronous FET applications. The IRF7811A offers an
extremely low combination of Q sw & R DS(on) for reduced
losses in control FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
V DS
R DS (on)
Q G
Q sw
Q oss
IRF7809A
30V
8.5 m ?
73 nC
22.5 nC
30 nC
IRF7811A
28V
12 m ?
23 nC
7 nC
31 nC
dissipation of greater than 2W is possible in a typical PCB
mount application.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
IRF7809A
30
±12
IRF7811A
28
Units
V
Continuous Drain or Source
T A = 25°C
I D
14.5
11.4
Current (V GS ≥ 4.5V)
Pulsed Drain Current ?
Power Dissipation
T L = 90°C
T A = 25°C
I DM
P D
14.2
100
2.5
11.2
100
A
W
T L = 90°C
2.4
Junction & Storage Temperature Range
T J , T STG
–55 to 150
°C
Continuous Source Current (Body Diode)
Pulsed Source Current ?
I S
I SM
2.5
50
2.5
50
A
Thermal Resistance
Parameter
Max.
Units
Maximum Junction-to-Ambient ?
Maximum Junction-to-Lead
www.irf.com
R θ JA
R θ JL
50
25
°C/W
°C/W
1
01/19/00
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF7809AV | 功能描述:MOSFET N-CH 30V 13.3A 8-SOIC RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRF7809AVHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 13.3A 8-Pin SOIC |
| IRF7809AVPBF | 功能描述:MOSFET 30V 1 N-CH HEXFET 9mOhms 41nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7809AVTRHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 13.3A 8-Pin SOIC T/R 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 13.3A 8SOIC - Tape and Reel |
| IRF7809AVTRPBF | 功能描述:MOSFET MOSFT 30V 13.3A 9mOhm 41nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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