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参数资料
| 型号： | IRF9410TRPBF |
| 厂商： | International Rectifier |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 7A 8-SOIC |
| 产品目录绘图： | IR Hexfet 8-SOIC |
| 标准包装： | 1 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 30 毫欧 @ 7A，10V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 27nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 550pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 标准包装 |
| 其它名称： | IRF9410PBFDKR |
PD - 95260
IRF9410PbF
D
D
R DS(on) = 0.030 ?
D
l
l
l
l
l
l
l
Generation V Technology
Ultra Low On-Resistance
N-Channel MOSFET
Surface Mount
Very Low Gate Charge and
Switching Losses
Fully Avalanche Rated
Lead-Free
S
S
S
G
1
2
3
4
HEXFET ? Power MOSFET
A
A
8
7 D V DSS = 30V
6
5
Top View
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Recommended upgrade: IRF7403 or IRF7413
Lower profile/smaller equivalent: IRF7603
SO-8
Absolute Maximum Ratings ( T A = 25°C Unless Otherwise Noted)
Symbol Maximum
Units
Continuous Drain Current ?
Maximum Power Dissipation ?
Drain-Source Voltage
Gate-Source Voltage
T A = 25°C
T A = 70°C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
T A = 25°C
T A = 70°C
Single Pulse Avalanche Energy ?
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ?
Junction and Storage Temperature Range
V DS
V GS
I D
I DM
I S
P D
E AS
I AR
E AR
dv/dt
T J, T STG
30
± 20
7.0
5.8
37
2.8
2.5
1.6
70
4.2
0.25
5.0
-55 to + 150
V
A
W
mJ
A
mJ
V/ ns
°C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient ?
www.irf.com
Symbol
R θ JA
Limit
50
Units
°C/W
1
09/21/04
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