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| 型号： | IRF9540NSTRR |
| 厂商： | International Rectifier |
| 文件页数： | 2/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 100V 23A D2PAK |
| 标准包装： | 800 |
| 系列： | HEXFET® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 23A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 117 毫欧 @ 11A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 97nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1300pF @ 25V |
| 功率 - 最大： | 3.8W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 带卷 (TR) |
IRF9540NS/L
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
V (BR)DSS
Drain-to-Source Breakdown Voltage
-100
???
??? V V GS = 0V, I D = -250μA
? V (BR)DSS / ? T J Breakdown Voltage Temp. Coefficient
R DS(on) Static Drain-to-Source On-Resistance
???
???
-0.11
???
??? V/°C Reference to 25°C, I D = -1mA ?
0.117 ? V GS = -10V, I D = -11A ?
μA
100 V GS = 20V
-100
V GS = -20V
??? I D = -11A
??? R G = 5.1 ?
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
-2.0
5.3
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
15
67
51
51
-4.0 V V DS = V GS , I D = -250μA
??? S V DS = -50V, I D = -11A ?
-25 V DS = -100V, V GS = 0V
-250 V DS = -80V, V GS = 0V, T J = 150°C
nA
97 I D = -11A
15 nC V DS = -80V
51 V GS = -10V, See Fig. 6 and 13 ??
??? V DD = -50V
ns
??? R D = 4.2 ?, See Fig. 10 ?
L S
Internal Source Inductance
???
7.5
???
nH
Between lead,
and center of die contact
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
???
???
???
1300
400
240
??? V GS = 0V
??? pF V DS = -25V
??? ? = 1.0MHz, See Fig. 5 ?
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
I SM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ?
??? ???
??? ???
-23
-76
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
V SD
t rr
Q rr
t on
Notes:
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
??? ??? -1.6 V T J = 25°C, I S = -11A, V GS = 0V ?
??? 150 220 ns T J = 25°C, I F = -11A
??? 830 1200 nC di/dt = -100A/μs ??
Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D )
? Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
? Starting T J = 25°C, L = 7.1mH
R G = 25 ? , I AS = -11A. (See Figure 12)
? Pulse width ≤ 300μs; duty cycle ≤ 2%.
? Uses IRF9540N data and test conditions
? I SD ≤ -11A, di/dt ≤ -470A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
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