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参数资料
| 型号： | IRF9Z14STRLPBF |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 60V 6.7A D2PAK |
| 标准包装： | 800 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 500 毫欧 @ 4A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 12nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 270pF @ 25V |
| 功率 - 最大： | 3.7W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 带卷 (TR) |
IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
FEATURES
? Halogen-free According to IEC 61249-2-21
V DS (V)
R DS(on) ( ? )
V GS = - 10 V
- 60
0.50
Definition
? Advanced Process Technology
? Surface Mount (IRF9Z14S, SiHF9Z14S)
Q g (Max.) (nC)
Q gs (nC)
Q gd (nC)
Configuration
12
3.8
5.1
Single
? Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L)
? 175 °C Operating Temperature
? Fast Switching
? P-Channel
? Fully Avalanche Rated
? Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
I 2 PAK (TO-262)
D 2 PAK (TO-263)
S
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
G
D
S
G
D
S
G
wide variety of applications.
The D 2 PAK is a surface mount power package capable of
accommodating die size up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D 2 PAK is suitable for high current applications because of is
D
P-Channel MOSFET
low internal connection resistance and can dissipate up to
2.0 W in a typical surface mount application.
The through-hole version (IRF9Z14L, SiHF9Z14L) is
available for low-profile applications.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
D 2 PAK (TO-263)
SiHF9Z14S-GE3
IRF9Z14SPbF
SiHF9Z14S-E3
D 2 PAK (TO-263)
SiHF9Z14STRL-GE3 a
IRF9Z14STRLPbF a
SiHF9Z14STL-E3 a
I 2 PAK (TO-262)
SiHF9Z14L-GE3
IRF9Z14LPbF
SiHF9Z14L-E3
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V DS
V GS
LIMIT
- 60
± 20
UNIT
V
Continuous Drain Current e
Current a, e
Pulsed Drain
V GS at - 10 V
T C = 25 °C
T C = 100 °C
I D
I DM
- 6.7
- 4.7
- 27
A
Linear Derating Factor
0.29
W/°C
Single Pulse Avalanche Energy b, e
Avalanche Current a
Repetiitive Avalanche Energy a
E AS
I AR
E AR
140
- 6.7
4.3
mJ
A
mJ
Maximum Power Dissipation
T C = 25 °C
T A = 25 °C
P D
43
3.7
W
Peak Diode Recovery
dV/dt c, e
dV/dt
- 4.5
V/ns
Operating Junction and Storage Temperature Range T J , T stg
Soldering Recommendations (Peak Temperature) for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V DD = - 25 V, starting T J = 25 °C, L = 3.6 mH, R g = 25 ? , I AS = - 6.7 A (see fig. 12).
c. I SD ? - 6.7 A, dI/dt ? 90 A/μs, V DD ? V DS , T J ? 175 °C.
d. 1.6 mm from case.
e. Uses IRF9Z14, SiHF9Z14 data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91089
S11-1052-Rev. C, 30-May-11
- 55 to + 175
300 d
°C
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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| IRF9Z14STRR | 功能描述:MOSFET P-CH 60V 6.7A D2PAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRF9Z14STRRPBF | 功能描述:MOSFET P-Chan 60V 6.7 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF9Z15 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 4A I(D) | TO-220AB |
| IRF9Z20 | 功能描述:MOSFET P-CH 50V 9.7A TO-220AB RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRF9Z20PBF | 功能描述:MOSFET P-Chan 50V 9.7 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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