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参数资料
| 型号： | IRFB41N15D |
| 厂商： | International Rectifier |
| 文件页数： | 12/13页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 150V 41A TO-220AB |
| 标准包装： | 50 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 150V |
| 电流 - 连续漏极(Id) @ 25° C： | 41A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 45 毫欧 @ 25A，10V |
| Id 时的 Vgs(th)（最大）： | 5.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 110nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2520pF @ 25V |
| 功率 - 最大： | 200W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 其它名称： | *IRFB41N15D |
IRFB/IRFIB/IRFS/IRFSL41N15D
D 2 Pak Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
FEED DIRECTION 1.85 (.073)
4.10 (.161)
3.90 (.153)
1.60 (.063)
1.50 (.059)
11.60 (.457)
0.368 (.0145)
0.342 (.0135)
1.65 (.065)
11.40 (.449)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
1.75 (.069)
10.90 (.429)
10.70 (.421)
1.25 (.049)
16.10 (.634)
4.72 (.136)
4.52 (.178)
15.90 (.626)
FEED DIRECTION
NOTES :
330.00
(14.173)
MAX.
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
Notes:
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
4
? Repetitive rating; pulse width limited by
max. junction temperature.
? Starting T J = 25°C, L = 1.5mH, R G = 25 ? ,
I AS = 25A.
? I SD ≤ 25A, di/dt ≤ 340A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 175°C.
? Pulse width ≤ 300μs; duty cycle ≤ 2%.
? C oss eff. is a fixed capacitance that gives the same charging time
as C oss while V DS is rising from 0 to 80% V DSS
? This is only applied to TO-220AB package.
? This is applied to D 2 Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
TO-220AB & TO-220 FullPak packages are not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information . 07/03
12
www.irf.com
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| IRFB41N15DHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 150V 41A 3-Pin(3+Tab) TO-220AB |
| IRFB41N15DPBF | 功能描述:MOSFET 150V 1 N-CH HEXFET 45mOhms 72nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFB4212PBF | 功能描述:MOSFET MOSFT 100V 18A 72.5mOhm 15nC Qg RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFB4212PBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRFB4215 | 功能描述:MOSFET N-CH 60V 115A TO-220AB RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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