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参数资料
| 型号： | IRFG5210 |
| 英文描述： | TRANSISTOR | MOSFET | ARRAY | COMPLEMENTARY | 200V V(BR)DSS | 680MA I(D) | DIP |
| 中文描述： | 晶体管| MOSFET的|阵|互补| 200伏五（巴西）直| 680MA（丁）|双酯 |
| 文件页数： | 1/12页 |
| 文件大小： | 193K |
| 代理商： | IRFG5210 |
Absolute Maximum Ratings (Per Die)
Parameter
Continuous Drain Current
N-Channel
0.68
0.4
P-Channel
-0.68
-0.4
Units
ID @ VGS =± 10V, TC = 25°C
ID @ VGS =± 10V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
2.72
14
0.011
±20
64
—
—
20
-2.72
14
0.011
±20
110
—
—
27
~
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (0.63 in./1.6 mm from case for 10s)
1.3 (Typical)
g
Pre-Irradiation
o
C
A
04/17/02
www.irf.com
1
Product Summary
Part Number R
DS(on)
I
D
CHANNEL
IRFG5210 1.6
0.68A N
IRFG5210 1.6
-0.68A P
For footnotes refer to the last page
MO-036AB
IRFG5210
200V, Combination 2N-2P-CHANNEL
HEXFET
MOSFET TECHNOLOGY
PD - 91664B
POWER MOSFET
THRU-HOLE (MO-036AB)
HEXFET
MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state resis-
tance combined with high transconductance.
HEXFET
tran-
sistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET
transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
Features:
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Dynamic dv/dt Rating
Light-weight
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFG5210SCV | 制造商:International Rectifier 功能描述:TRANS MOSFET N/P-CH 200V 0.68A 14PIN MO-036AB - Bulk |
| IRFG5210SCX | 制造商:International Rectifier 功能描述:TRANS MOSFET N/P-CH 200V 0.68A 14PIN MO-036AB - Bulk |
| IRFG6110 | 制造商:International Rectifier 功能描述:TRANS MOSFET N/P-CH 100V 1A/0.75A 14PIN MO-036AB - Bulk |
| IRFG6113 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | ARRAY | COMPLEMENTARY | 60V V(BR)DSS | 850MA I(D) | DIP |
| IRFG9110 | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 100V 0.75A 14-Pin MO-036AB |
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