参数资料
型号: IRFG5210
英文描述: TRANSISTOR | MOSFET | ARRAY | COMPLEMENTARY | 200V V(BR)DSS | 680MA I(D) | DIP
中文描述: 晶体管| MOSFET的|阵|互补| 200伏五(巴西)直| 680MA(丁)|双酯
文件页数: 8/12页
文件大小: 193K
代理商: IRFG5210
8
www.irf.com
IRFG5210
Fig 4.
Normalized On-Resistance
Vs. Temperature
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
P-Channel
Q2,Q4
0.1
1
10
0.1
1
10
100
20μs PULSE WIDTH
T = 150 C
°
TOP
BOTTOM
VGS
-V , Drain-to-Source Voltage (V)
-
D
-4.5V
0.1
1
10
4
5
6
7
VDS
20μs PULSE WIDTH
-V , Gate-to-Source Voltage (V)
-
D
T = 25 C
T = 150 C
°
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature C)
R
(
D
V
=
I =
GS
-12V
-0.68A
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