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参数资料
| 型号： | IRFH5255TRPBF |
| 厂商： | International Rectifier |
| 文件页数： | 8/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V 15A 8VQFN |
| 标准包装： | 4,000 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 15A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6 毫欧 @ 15A，10V |
| Id 时的 Vgs(th)（最大）： | 2.35V @ 25µA |
| 闸电荷(Qg) @ Vgs： | 14.5nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 988pF @ 13V |
| 功率 - 最大： | 3.6W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-VQFN |
| 供应商设备封装： | PQFN（5x6）单芯片焊盘 |
| 包装： | 带卷 (TR) |
IRFH5255PbF
PQFN 5x6 Outline "B" Tape and Reel
Qualification information ?
Qualification level
Indus trial
(per JE DE C JE S D47F
??
???
guidelines )
(per JE DE C J-S T D-020D
Moisture Sensitivity Level
RoHS compliant
PQFN 5mm x 6mm
Yes
MS L1
???
)
?
??
???
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
? Repetitive rating; pulse width limited by max. junction temperature.
? Starting T J = 25°C, L = 0.47mH, R G = 50 Ω , I AS = 15A.
? Pulse width ≤ 400 μ s; duty cycle ≤ 2%.
? R θ is measured at T J of approximately 90°C.
? When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Revision History
Date
12/16/2013
Comments
? Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #259)
? Updated data sheet with new IR corporate template
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
8
www.irf.com ? 2013 International Rectifier
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December 16, 2013
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相关代理商/技术参数 |
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| IRFH5300PBF | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRFH5300TR2PBF | 功能描述:MOSFET MOSFT 30V 100A 1.4mOhm mx 50nC Qg RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFH5300TRPBF | 功能描述:MOSFET 30V SINGLE N-CH 1.4mOhms 50nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFH5301PBF | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRFH5301TR2PBF | 功能描述:MOSFET MOSFT 30V 100A 1.85mOhm mx 37nC Qg RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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