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| 型号： | IRFR5305TRR |
| 厂商： | International Rectifier |
| 文件页数： | 2/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 55V 31A DPAK |
| 标准包装： | 3,000 |
| 系列： | HEXFET® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 31A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 65 毫欧 @ 16A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 63nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1200pF @ 25V |
| 功率 - 最大： | 110W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
IRFR/U5305
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V (BR)DSS
Drain-to-Source Breakdown Voltage
-55 ––– ––– V V GS = 0V, I D = -250μA
? V (BR)DSS / ? T J Breakdown Voltage Temp. Coefficient
–––
-0.034 ––– V/°C
Reference to 25°C, I D = -1mA
R DS(on)
Static Drain-to-Source On-Resistance
––– ––– 0.065
?
V GS = -10V, I D = -16A ?
––– 39 ––– R G = 6.8 ?
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
-2.0 ––– -4.0 V V DS = V GS , I D = -250μA
8.0 ––– ––– S V DS = -25V, I D = -16A ?
––– ––– -25 V DS = -55V, V GS = 0V
μA
––– ––– -250 V DS = -44V, V GS = 0V, T J = 150°C
––– ––– 100 V GS = 20V
nA
––– ––– -100 V GS = -20V
––– ––– 63 I D = -16A
––– ––– 13 nC V DS = -44V
––– ––– 29 V GS = -10V, See Fig. 6 and 13 ??
––– 14 ––– V DD = -28V
––– 66 ––– I D = -16A
ns
––– 63 ––– R D = 1.6 ?, See Fig. 10 ??
L D
L S
Internal Drain Inductance
Internal Source Inductance
–––
–––
4.5
7.5
–––
–––
nH
Between lead,
6mm (0.25in.)
from package
and center of die contact ?
G
D
S
C iss
Input Capacitance
–––
1200 ––– V GS = 0V
C oss
C rss
Output Capacitance
Reverse Transfer Capacitance
––– 520 ––– pF V DS = -25V
––– 250 ––– ? = 1.0MHz, See Fig. 5 ?
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
I SM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ?
–––
–––
–––
–––
-31
-110
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
V SD
t rr
Q rr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
–––
–––
–––
–––
71
170
-1.3
110
250
V
ns
nC
T J = 25°C, I S = -16A, V GS = 0V ?
T J = 25°C, I F = -16A
di/dt = -100A/μs ??
Notes:
? Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
? V DD = -25V, starting T J = 25°C, L = 2.1mH
R G = 25 ? , I AS = -16A. (See Figure 12)
? I SD ≤ -16A, di/dt ≤ -280A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 175°C
? Pulse width ≤ 300μs; duty cycle ≤ 2%.
? This is applied for I-PAK, L S of D-PAK is measured between
lead and center of die contact.
? Uses IRF5305 data and test conditions.
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
** Uses typical socket mount.
2
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相关代理商/技术参数 |
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| IRFR5305TRRPBF | 制造商:International Rectifier 功能描述:MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.065Ohm;ID -31A;D-Pak (TO-252AA);PD 110W 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 55V 31A 3PIN DPAK - Tape and Reel |
| IRFR5305TRRPBFBL | 制造商:International Rectifier 功能描述: |
| IRFR540Z | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET㈢ Power MOSFET |
| IRFR540ZPBF | 功能描述:MOSFET 100V SINGLE N-CH 28.5mOhms 39nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFR540ZTRLPBF | 功能描述:MOSFET 100V SINGLE N-CH 28.5mOhms 39nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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