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参数资料
| 型号： | IRFR6215TRR |
| 厂商： | International Rectifier |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 150V 13A DPAK |
| 标准包装： | 3,000 |
| 系列： | HEXFET® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 150V |
| 电流 - 连续漏极(Id) @ 25° C： | 13A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 295 毫欧 @ 6.6A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 66nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 860pF @ 25V |
| 功率 - 最大： | 110W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
PD - 91749
PRELIMINARY
IRFR/U6215
HEXFET ? Power MOSFET
l
P-Channel
l
l
175°C Operating Temperature
Surface Mount (IRFR6215)
D
V DSS = -150V
l Straight Lead (IRFU6215)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
Description
G
S
R DS(on) = 0.295 ?
I D = -13A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
Parameter
D -P A K
T O -252 A A
Max.
I-P A K
T O -25 1A A
Units
I D @ T C = 25°C
Continuous Drain Current, V GS @ 10V
-13
I D @ T C = 100°C
I DM
P D @T C = 25°C
V GS
E AS
I AR
E AR
dv/dt
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current ??
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ??
Avalanche Current ??
Repetitive Avalanche Energy ??
Peak Diode Recovery dv/dt ?
-9.0
-44
110
0.71
± 20
310
-6.6
11
5.0
A
W
W/°C
V
mJ
A
mJ
V/ns
T J
T STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
-55 to + 175
300 (1.6mm from case )
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
Junction-to-Case
–––
1.4
R θ JA
R θ JA
Junction-to-Ambient (PCB mount) **
Junction-to-Ambient
–––
–––
50
110
°C/W
www.irf.com
1
5/11/98
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相关代理商/技术参数 |
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|---|---|
| IRFR6215TRRPBF | 功能描述:MOSFET 1 P-CH -150V HEXFET 580mOhms 44nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFR7440PBF | 功能描述:MOSFET 40V, 90A, 2.5 mOhm 89 nC Qg, D-Pak RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFR7440TRPbF | 功能描述:MOSFET 40V 90A 2.5mOhm 89nC StrongIRFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFR7446PBF | 制造商:International Rectifier 功能描述:MOSFET - Bulk 制造商:International Rectifier 功能描述:MOSFET N-CH 40V 56A DPAK |
| IRFR7446TRPBF | 制造商:International Rectifier 功能描述: |
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