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| 型号： | IRFR6215TRR |
| 厂商： | International Rectifier |
| 文件页数： | 2/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 150V 13A DPAK |
| 标准包装： | 3,000 |
| 系列： | HEXFET® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 150V |
| 电流 - 连续漏极(Id) @ 25° C： | 13A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 295 毫欧 @ 6.6A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 66nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 860pF @ 25V |
| 功率 - 最大： | 110W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
IRFR/U6215
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
V (BR)DSS
Drain-to-Source Breakdown Voltage
-150
–––
––– V V GS = 0V, I D = -250μA
? V (BR)DSS / ? T J
Breakdown Voltage Temp. Coefficient
–––
-0.20
–––
V/°C
Reference to 25°C, I D = -1mA
?
––– R G = 6.8 ?
R DS(on)
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
–––
–––
-2.0
3.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
36
53
37
0.295 V GS = -10V, I D = -6.6A ?
0.58 V GS = -10V, I D = -6.6A ? T J = 150°C
-4.0 V V DS = V GS , I D = -250μA
––– S V DS = -50V, I D = -6.6A ?
-25 V DS = -150V, V GS = 0V
μA
-250 V DS = -120V, V GS = 0V, T J = 150°C
100 V GS = 20V
nA
-100 V GS = -20V
66 I D = -6.6A
8.1 nC V DS = -120V
35 V GS = -10V, See Fig. 6 and 13 ??
––– V DD = -75V
––– I D = -6.6A
ns
––– R D = 12 ?, See Fig. 10 ??
L D
L S
Internal Drain Inductance
Internal Source Inductance
–––
–––
4.5
7.5
–––
–––
nH
Between lead,
6mm (0.25in.)
from package
and center of die contact ?
G
D
S
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
860
220
130
––– V GS = 0V
––– pF V DS = -25V
––– ? = 1.0MHz, See Fig. 5 ?
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
I SM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ??
––– –––
––– –––
-13
-44
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
V SD
t rr
Q rr
t on
Notes:
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– -1.6 V T J = 25°C, I S = -6.6A, V GS = 0V ?
––– 160 240 ns T J = 25°C, I F = -6.6A
––– 1.2 1.7 μC di/dt = 100A/μs ??
Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D )
? Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
? Starting T J = 25°C, L = 14mH
R G = 25 ? , I AS = -6.6A. (See Figure 12)
? Pulse width ≤ 300μs; duty cycle ≤ 2%
? This is applied for I-PAK, L S of D-PAK is measured between lead and
center of die contact
? I SD ≤ -6.6A, di/dt ≤ -620A/μs, V DD ≤ V (BR)DSS , ? Uses IRF6215 data and test conditions
T J ≤ 175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material )
For recommended footprint and soldering techniques refer to application note #AN-994
2
www.irf.com
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