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参数资料
| 型号： | IRG4CH50UB |
| 文件页数： | 1/8页 |
| 文件大小： | 188K |
| 代理商： | IRG4CH50UB |
Parameter
Max.
600
23
12
92
92
± 20
180
100
42
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
V
mJ
-55 to + 150
300 (0.063 in. (1.6mm from case )
°C
IRG4BC30W-S
INSULATED GATE BIPOLAR TRANSISTOR
PD - 91790
E
C
G
n-channel
Features
Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
Industry-benchmark switching losses improve
efficiency of all power supply topologies
50% reduction of Eoff parameter
Low IGBT conduction losses
Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
Benefits
Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
V
CES
= 600V
V
CE(on) typ.
= 2.10V
@V
GE
= 15V, I
C
= 12A
8/13/98
Parameter
Typ.
–––
–––
Max.
1.2
40
Units
°C/W
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient, ( PCB Mounted,steady-state)*
Thermal Resistance
Absolute Maximum Ratings
W
D Pak
www.irf.com
1
*
When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering
techniques refer to application note #AN-994.
相关PDF资料 |
PDF描述 |
|---|---|
| IRG4MC30F | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 15A I(C) | TO-254AA |
| IRG4MC50F | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 35A I(C) | TO-254AA |
| IRG4MC50U | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 35A I(C) | TO-254AA |
| IRG4PC50S-P | 600V DC-1 kHz (Standard) Discrete IGBT in a SM TO-247 package |
| IRG4PC60F-P | 600V Fast 1-8 kHz Discrete IGBT in a TO-247AC Solder Plate package |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRG4IBC10UD | 功能描述:IGBT W/DIODE 600V 6.8A TO-220FP RoHS:否 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| IRG4IBC10UDPBF | 功能描述:IGBT 晶体管 600V UltraFast 8-60kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRG4IBC20FD | 功能描述:IGBT W/DIODE 600V 14.3A TO-220FP RoHS:否 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| IRG4IBC20FDPBF | 功能描述:IGBT 晶体管 600V Fast 1-8kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRG4IBC20FDPBF | 制造商:International Rectifier 功能描述:IGBT |
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