- 您现在的位置：买卖IC网 > PDF目录377518 > IRG4RC10KDTR (International Rectifier) TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 5A I(C) | TO-252AA PDF资料下载
参数资料
| 型号： | IRG4RC10KDTR |
| 厂商： | International Rectifier |
| 英文描述： | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 5A I(C) | TO-252AA |
| 中文描述： | 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 5A条一（c）|至252AA |
| 文件页数： | 1/10页 |
| 文件大小： | 190K |
| 代理商： | IRG4RC10KDTR |
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Max.
600
9.0
5.0
18
18
4.0
16
10
± 20
38
15
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
t
sc
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
A
μs
V
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
IRG4RC10KD
Short Circuit Rated
UltraFast IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Short Circuit Rated UltraFast: Optimized for
high operating frequencies >5.0 kHz , and Short
Circuit Rated to 10μs @ 125
°
C, V
GE
= 15V
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
Industry standard TO-252AA package
E
G
n-channel
C
V
CES
= 600V
V
CE(on) typ.
= 2.39V
@V
GE
= 15V, I
C
= 5.0A
12/30/00
Benefits
Latest generation 4 IGBT's offer highest power density
motor controls possible
HEXFRED
TM
diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
For hints see design tip 97003
Absolute Maximum Ratings
W
D-PAK
TO-252AA
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994
www.irf.com
Thermal Resistance
°
C/W
Parameter
Typ.
–––
–––
–––
0.3 (0.01)
Max.
3.3
7.0
50
–––
Units
R
θ
JC
R
θ
JC
R
θ
JA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient (PCB mount)*
Weight
g (oz)
PD 91736A
1
相关PDF资料 |
PDF描述 |
|---|---|
| IRG4RC10KDTRL | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 5A I(C) | TO-252AA |
| IRG4RC10KDTRR | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 5A I(C) | TO-252AA |
| IRG4RC20F | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.82V, @Vge=15V, Ic=12A) |
| IRG4ZH50KD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRGB14C40LPBF | IGBT with on-chip Gate-Emitter and Gate-Collector clamps |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRG4RC10KDTRL | 制造商:International Rectifier 功能描述:600V 8.500A COPAK D-PAK / IGBT : JA / DI |
| IRG4RC10KDTRPBF | 功能描述:IGBT 模块 600V 8.500A RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| IRG4RC10KDTRR | 制造商:International Rectifier 功能描述:600V 8.500A COPAK D-PAK / IGBT : JA / DI |
| IRG4RC10KPBF | 功能描述:IGBT 晶体管 600V UltraFast 8-25kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRG4RC10KTR | 功能描述:IGBT UFAST 600V 9A D-PAK RoHS:否 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
发布紧急采购，3分钟左右您将得到回复。