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参数资料
| 型号： | IRG4RC10KDTRL |
| 厂商： | International Rectifier |
| 英文描述： | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 5A I(C) | TO-252AA |
| 中文描述： | 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 5A条一（c）|至252AA |
| 文件页数： | 2/10页 |
| 文件大小： | 190K |
| 代理商： | IRG4RC10KDTRL |
IRG4RC10KD
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
2
www.irf.com
Parameter
Q
g
Total Gate Charge (turn-on)
Q
ge
Gate - Emitter Charge (turn-on)
Q
gc
Gate - Collector Charge (turn-on)
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
sc
Short Circuit Withstand Time
Min. Typ. Max. Units
—
19
—
2.9
—
9.8
—
49
—
28
—
97
—
140
—
0.25
—
0.14
—
0.39
10
—
Conditions
I
C
= 5.0A
V
CC
= 400V
V
GE
= 15V
29
4.3
15
—
—
150
210
—
—
0.48
—
nC
See Fig.8
T
J
= 25
°
C
I
C
= 5.0A, V
CC
= 480V
V
GE
= 15V, R
G
= 100
Energy losses include "tail"
and diode reverse recovery
See Fig. 9,10,14
V
CC
= 360V, T
J
= 125
°
C
V
GE
= 15V, R
G
= 100
, V
CPK
< 500V
T
J
= 150
°
C,
See Fig. 10,11,14
I
C
= 5.0A, V
CC
= 480V
V
GE
= 15V, R
G
= 100
Energy losses include "tail"
and diode reverse recovery
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
See Fig. 7
= 1.0MHz
T
J
= 25
°
C See Fig.
T
J
= 125
°
C 14 I
F
= 4.0A
T
J
= 25
°
C See Fig.
T
J
= 125
°
C 15 V
R
= 200V
T
J
= 25
°
C See Fig.
T
J
= 125
°
C 16 di/dt = 200A/μs
T
J
= 25
°
C See Fig.
T
J
= 125
°
C 17
mJ
μs
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
46
32
100
310
0.56
7.5
220
29
7.5
28
38
2.9
3.7
40
70
280
235
—
—
—
—
—
—
—
—
—
42
57
5.2
6.7
60
105
—
—
mJ
nH
pF
ns
I
rr
Diode Peak Reverse Recovery Current
A
Q
rr
Diode Reverse Recovery Charge
nC
di
(rec)M
/dt
Diode Peak Rate of Fall of Recovery
During t
b
A/μs
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Saturation Voltage
Min. Typ. Max. Units
600
—
—
0.58
—
2.39
—
3.25
—
2.63
3.0
—
—
-11
1.2
1.8
—
—
—
—
1000
—
1.5
—
1.4
—
—
±100
Conditions
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0mA
I
C
= 5.0A
I
C
= 9.0A
I
C
= 5.0A, T
J
= 150
°
C
V
CE
= V
GE
, I
C
= 250μA
mV/
°
C V
CE
= V
GE
, I
C
= 250μA
S
V
CE
= 50V, I
C
= 5.0A
μA
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 150
°
C
V
I
C
= 4.0A
I
C
= 4.0A, T
J
= 150
°
C
nA
V
GE
= ±20V
—
—
2.62
—
—
6.5
—
—
250
V
V/
°
C
V
GE
= 15V
See Fig. 2, 5
V
V
GE(th)
V
GE(th)
/
T
J
g
fe
I
CES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
V
FM
Diode Forward Voltage Drop
1.8
1.7
See Fig. 13
I
GES
Gate-to-Emitter Leakage Current
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
ns
ns
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