参数资料
型号: IRGIB7B60KD
厂商: International Rectifier
英文描述: INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
中文描述: 绝缘栅双极型晶体管,超快软恢复二极管
文件页数: 11/12页
文件大小: 435K
代理商: IRGIB7B60KD
IRGIB7B60KD
www.irf.com
11
-600
-500
-400
-300
-200
-100
0
100
-0.15
-0.05
0.05
0.15
0.25
time (μS)
V
F
-20
-15
-10
-5
0
5
10
15
I
F
Peak
I
RR
t
RR
Q
RR
10%
Peak
IRR
Fig. WF3- Typ. Diode Recovery Waveform
@ T
J
= 150°C using Fig. CT.4
Fig. WF4- Typ. S.C Waveform
@ T
C
= 150°C using Fig. CT.3
Fig. WF1- Typ. Turn-off Loss Waveform
@ T
J
= 150°C using Fig. CT.4
Fig. WF2- Typ. Turn-on Loss Waveform
@ T
J
= 150°C using Fig. CT.4
-200
-100
0
100
200
300
400
500
600
0
0.2
0.4
0.6
0.8
1
Time (uS)
V
-4
-2
0
2
4
6
8
10
12
I
tf
Eoff Loss
90% Ice
5% Vce
5% Ice
Vce
Ice
-100
0
100
200
300
400
500
600
0.3
0.5
0.7
0.9
Time (uS)
V
-4
0
4
8
12
16
20
24
I
Eon
Loss
tr
90% Ice
10% Ice
5% Vce
Vce
Ice
0
50
100
150
200
250
300
350
400
0.00
10.00
20.00
30.00
40.00
50.00
Time (uS)
V
0
20
40
60
80
I
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