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参数资料
| 型号： | IRGIB7B60KD |
| 厂商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 中文描述： | 绝缘栅双极型晶体管，超快软恢复二极管 |
| 文件页数： | 2/12页 |
| 文件大小： | 435K |
| 代理商： | IRGIB7B60KD |
IRGIB7B60KD
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
2
www.irf.com
Note
to
are on page 12
Min.
600
—
—
—
—
3.5
—
—
—
—
—
—
—
—
—
Typ. Max. Units Conditions
—
—
V
0.57
—
V/°C V
GE
= 0V, I
C
= 1mA (25°C-150°C)
1.8
2.2
I
C
= 8.0A, V
GE
= 15V, T
J
= 25°C
2.2
2.5
V
I
C
= 8.0A, V
GE
= 15V, T
J
= 150°C
2.3
2.5
I
C
= 8.0A, V
GE
= 15V, T
J
= 175°C
4.5
5.5
V
V
CE
= V
GE
, I
C
= 250μA
-9.5
—
mV/°C V
CE
= V
GE
, I
C
= 1mA (25°C-150°C)
3.7
—
S
V
CE
= 50V, I
C
= 8.0A, PW = 80μs
1.0
150
V
GE
= 0V, V
CE
= 600V
200
500
μA
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
720
1100
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
1.25
1.45
V
I
F
= 5.0A, V
GE
= 0V
1.20
1.40
I
F
= 5.0A, T
J
= 150°C, V
GE
= 0V
1.20
1.30
I
F
= 5.0A, T
J
= 175°C, V
GE
= 0V
—
±100
nA
V
GE
= ±20V, V
CE
= 0V
Ref.Fig.
V
GE
= 0V, I
C
= 500μA
5,6,7
V
CE(on)
Collector-to-Emitter Voltage
9,10,11
V
GE(th)
V
GE(th)
/
T
J
gfe
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
9,10,11
12
I
CES
Zero Gate Voltage Collector Current
V
FM
Diode Forward Voltage Drop
8
I
GES
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Total Gate Charge (turn-on)
Q
ge
Gate-to-Emitter Charge (turn-on)
Q
gc
Gate-to-Collector Charge (turn-on)
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
tot
Total Switching Loss
t
d(on)
Turn-On delay time
t
r
Rise time
t
d(off)
Turn-Off delay time
t
f
Fall time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
tot
Total Switching Loss
t
d(on)
Turn-On delay time
t
r
Rise time
t
d(off)
Turn-Off delay time
t
f
Fall time
L
E
Internal Emitter Inductance
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
RBSOA
Reverse Bias Safe Operating Area
Gate-to-Emitter Leakage Current
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
FULL SQUARE
Typ. Max. Units
29
44
3.7
5.6
14
21
160
268
160
268
320
433
23
27
22
26
140
150
32
42
220
330
270
381
490
711
22
27
21
25
180
198
40
56
7.5
—
440
660
38
57
16
24
Conditions
Ref.Fig.
I
C
= 8.0A
V
CC
= 400V
V
GE
= 15V
I
C
= 8.0A, V
CC
= 400V
μJ V
GE
= 15V, R
G
= 50
, L = 1.1mH
T
J
= 25°C
I
C
= 8.0A, V
CC
= 400V
ns
V
GE
= 15V, R
G
= 50
, L = 1.1mH
T
J
= 25°C
23
nC
CT1
CT4
CT4
I
C
= 8.0A, V
CC
= 400V
V
GE
= 15V, R
G
= 50
, L = 1.1mH
T
J
= 150°C
I
C
= 8.0A, V
CC
= 400V
ns
V
GE
= 15V, R
G
= 50
, L = 1.1mH
T
J
= 150°C
CT4
μJ
13,15
WF1,WF2
14,16
CT4
WF1
WF2
nH
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
f = 1.0MHz
T
J
= 150°C, I
C
= 54A, Vp = 600V
V
CC
=500V,V
GE
= +15V to 0V,R
G
= 50
T
J
= 150°C, Vp = 600V, R
G
= 100
V
CC
=360V,V
GE
= +15V to 0V
pF
22
4
CT2
SCSOA
Short Circuit Safe Operating Area
10
—
—
μs
CT3
WF4
I
SC
(Peak)
E
rec
t
rr
I
rr
Q
rr
Peak Short Circuit Collector Current
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Diode Reverse Recovery Charge
—
—
—
—
—
70
100
95
13
620
—
133
120
17
800
A
μJ
ns
A
nC
WF4
T
J
= 150°C
V
CC
= 400V, I
F
= 8.0A, L = 1.07mH
V
GE
= 15V, R
G
= 50
di/dt = 500A/μS
17,18,19
20,21
CT4,WF3
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