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参数资料
| 型号： | IRGIH50F |
| 厂商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR |
| 中文描述： | 绝缘栅双极晶体管 |
| 文件页数： | 2/8页 |
| 文件大小： | 547K |
| 代理商： | IRGIH50F |
2
www.irf.com
IRGIH50F
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Total Inductance
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.4
–––
4.5
–––
5.9
–––
33
–––
15
–––
590
–––
500
–––
13
–––
6.8
Conditions
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
C
+L
E
100
21
43
68
26
480
330
–––
–––
8.2
–––
–––
–––
–––
–––
–––
I
C
= 25A
V
CC
= 400V
V
GE
= 15V
I
C
= 25A, V
CC
= 400V
V
GE
= 15V, R
G
= 2.35
Energy losses include "tail"
See Fig. 9, 10, 14
nC
See Fig. 8
T
J
= 125°C
I
C
= 25A, V
CC
= 400V
V
GE
= 15V, R
G
= 2.35
Energy losses include "tail"
See Fig. 11, 14
Measured from Collector lead (6mm/
0.25in. from package) to Emitter
lead (6mm / 0.25in. from package)
V
GE
= 0V
V
CC
= 30V
See Fig. 7
= 1.0MHz
nH
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 2400 –––
–––
140
–––
28
–––
–––
pF
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
Min. Typ. Max. Units
1200
–––
22
–––
–––
1.1
–––
2.1
–––
2.5
–––
2.4
3.0
–––
–––
-14
7.5
–––
–––
–––
–––
–––
–––
–––
Conditions
V
(BR)CES
V
(BR)ECS
–––
–––
–––
2.9
–––
–––
5.5
–––
–––
100
1200
±100
V
V
V
GE
= 0V, I
C
= 100 μA
V
GE
= 0V, I
C
= 1.0 A
V
GE
= 0V, I
C
= 1.0 mA
I
C
= 25A V
GE
= 15V
I
C
= 45A See Fig.2, 5
I
C
= 25A , T
J
= 125
°
C
V
CE
= V
GE
, I
C
= 250 μA
mV/
°
C V
CE
= V
GE
, I
C
= 250 μA
S
V
CE
=
100V, I
C
= 25A
V
GE
= 0V, V
CE
= 960V
V
GE
= 0V, V
CE
= 960V, T
J
= 125
°
C
nA
V
GE
= ±20V
V/
°
C
V
CE(ON)
Collector-to-Emitter Saturation Voltage
V
GE(th)
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
g
fe
Forward Transconductance
Gate Threshold Voltage
I
GES
Gate-to-Emitter Leakage Current
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
CES
Zero Gate Voltage Collector Current
μA
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
V
ns
mJ
ns
mJ
For footnotes refer to the last page
Note: Corresponding Spice and Saber models are available on the Website.
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