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参数资料
| 型号： | IRGIH50F |
| 厂商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR |
| 中文描述： | 绝缘栅双极晶体管 |
| 文件页数： | 8/8页 |
| 文件大小： | 547K |
| 代理商： | IRGIH50F |
8
www.irf.com
IRGIH50F
Case Outline and Dimensions
—
TO-259AA
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
Data and specifications subject to change without notice. 02/02
Notes:
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature.
V
CC
= 80%(V
CES
), V
GE
= 20V, L =
10μH, R
G
= 5.0
Pulse width 5.0μs, single shot.
Equipment limitation.
Pulse width
≤
80μs; duty factor
≤
0.1%.
LEGEND
1 = COLLECTOR
2 = EMITTER
3 = GATE
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