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参数资料
| 型号： | IRHN8250 |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET Transistor(HEXFET 晶体管) |
| 中文描述： | 的HEXFET晶体管（之HEXFET晶体管） |
| 文件页数： | 12/12页 |
| 文件大小： | 274K |
| 代理商： | IRHN8250 |
IRHN7250, IRHN8250, JANSR-, JANSH-, 2N7269U
Devices
12
www.irf.com
See Figures 18 through 31 for pre-irradiation
curves
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 25V, Starting TJ = 25°C,
Peak IL = 26A,L=1.9mH, RG=25
ISD
≤
26A, di/dt
≤
190A/
μ
s,
VDD
≤
BVDSS, TJ
≤
150°C
Suggested RG =2.35
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, codition A.
Total Dose Irradiation with VDS Bias.
VDS = 0.8 rated BVDSS (pre-radiation)
applied and VGS = 0 during irradiation per
MlL-STD-750, method 1019, condition A.
This test is performed using a flash x-ray
source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse.
All Pre-Irradiation and Post-Irradiation test
conditions are
identical
to facilitate direct
comparison for circuit applications.
Pre-Irradiation
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, Tel: (310) 252 7105
IR GREAT BRITAIN:
Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA:
15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN:
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA:
1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:
16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
Data and specifications subject to change without notice. 2/2000
Case Outline and Dimensions — SMD-1
PAD ASSIGNMENTS
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