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参数资料
| 型号： | IRHN9130 |
| 厂商： | International Rectifier |
| 英文描述： | P-Channel,-100 Volt, 0.3Ω, RAD HARD HEXFET(P沟道,-100 V, 0.3Ω,抗辐射HEXFET晶体管) |
| 中文描述： | P沟道，-100伏，0.3Ω，RAD数据通信硬的HEXFET性（P沟道，-100五，0.3Ω，抗辐射的HEXFET晶体管） |
| 文件页数： | 8/8页 |
| 文件大小： | 119K |
| 代理商： | IRHN9130 |
IRHN9130, IRHN93130 Device
Pre-Irradiation
8
www.irf.com
Repetitive Rating; Pulse width limited by
maximum junction temperature.
Refer to current HEXFET reliability report.
@ VDD = -25V, Starting TJ = 25°C,
EAS = [0.5 * L * (IL
Peak IL = -11A, VGS = -12V, 25
≤
RG
≤
ISD
≤
-11A, di/dt
≤
-480A/
μ
s,
VDD
≤
BVDSS, TJ
≤
150°C
Suggested RG = 7.5
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
2
) ]
Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
VDS = 0.8 rated BVDSS (pre-Irradiation)
applied and VGS = 0 during irradiation per
MlL-STD-750, method 1019, condition A.
This test is performed using a flash x-ray
source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse.
All Pre-Irradiation and Post-Irradiation test
conditions are
identical
to facilitate direct
comparison for circuit applications.
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN:
Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA:
15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST:
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA:
1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:
16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/ Data and specifications subject to change without notice. 2/99
Case Outline and Dimensions — SMD-1
SMD-1
相关PDF资料 |
PDF描述 |
|---|---|
| IRHN93130 | P-Channel,-100 Volt, 0.3Ω, RAD HARD HEXFET(P沟道,-100 V, 0.3Ω,抗辐射HEXFET晶体管) |
| IRHN9230 | P-Channel RAD HARD HEXFET TRANSISTOR(P 沟道 Rad Hard 技术 HEXFET晶体管) |
| IRHN9250 | HEXFET Transistor(HEXFET 晶体管) |
| IRHN93250 | HEXFET Transistor(HEXFET 晶体管) |
| IRHNA3160 | Surface Mount Power MOSFET(表贴型功率MOS场效应管) |
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参数描述 |
|---|---|
| IRHN9150 | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 22A 3SMD-1 - Rail/Tube |
| IRHN9150SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHN9230 | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHN9250 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHN93130 | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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