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| 型号： | IRLML2803GTRPBF |
| 厂商： | International Rectifier |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 1.2A SOT-23-3 |
| 产品目录绘图： | IR Hexfet Micro-3, SOT-23 |
| 标准包装： | 1 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 250 毫欧 @ 910mA，10V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 85pF @ 25V |
| 功率 - 最大： | 540mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | Micro3?/SOT-23 |
| 包装： | 标准包装 |
| 其它名称： | IRLML2803GTRPBFDKR |
IRLML2803GPbF
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
0.25 V GS = 10V, I D = 0.91A ?
0.40 V GS = 4.5V, I D = 0.46A ?
1.0 V DS = 24V, V GS = 0V
25 V DS = 24V, V GS = 0V, T J = 125°C
-100 V GS = -20V
100 V GS = 20V
??? I D = 0.91A
??? R G = 6.2 Ω
V (BR)DSS
Δ V (BR)DSS / Δ T J
R DS(on)
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
C iss
C oss
C rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
30
???
???
???
1.0
0.87
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
0.029
???
???
???
???
???
???
???
???
3.3
0.48
1.1
3.9
4.0
9.0
1.7
85
34
15
??? V V GS = 0V, I D = 250μA
??? V/°C Reference to 25°C, I D = 1mA
Ω
??? V V DS = V GS , I D = 250μA
??? S V DS = 10V, I D = 0.46A
μA
nA
5.0 I D = 0.91A
0.72 nC V DS = 24V
1.7 V GS = 10V, See Fig. 6 and 9 ?
??? V DD = 15V
ns
??? R D = 16 Ω, See Fig. 10 ?
??? V GS = 0V
??? pF V DS = 25V
??? ? = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
I SM
V SD
t rr
Q rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ?
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
???
???
???
???
???
???
???
???
26
22
0.54
7.3
1.2
40
32
A
V
ns
nC
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T J = 25°C, I S = 0.91A, V GS = 0V ?
T J = 25°C, I F = 0.91A
di/dt = 100A/μs ?
G
D
S
Notes:
? Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
? I SD ≤ 0.91A, di/dt ≤ 120A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 150°C
www.irf.com
? Pulse width ≤ 300μs; duty cycle ≤ 2%.
? Surface mounted on FR-4 board, t ≤ 5sec.
? Limited by T Jmax , starting T J = 25°C, L = 9.4mH, R G = 25 Ω , I AS = 0.9A.
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRLML2803PBF | 制造商:International Rectifier 功能描述:Bulk 制造商:International Rectifier 功能描述:MOSFET N LOGIC SOT-23 制造商:International Rectifier 功能描述:MOSFET, N, LOGIC, SOT-23 制造商:International Rectifier 功能描述:N CHANNEL MOSFET, 30V, 1.2A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:850mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V ;RoHS Compliant: Yes |
| IRLML2803TR | 功能描述:MOSFET N-CH 30V 1.2A SOT-23 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRLML2803TRHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 1.2A 3-Pin Micro T/R 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 1.2A 3PIN SOT-23 - Tape and Reel |
| IRLML2803TRPBF | 功能描述:MOSFET MOSFT 30V 1.2A 250mOhm 3.3nC LogLvl RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLML2803TRPBF-CUT TAPE | 制造商:IR 功能描述:Single N-Channel 30 V 540 W 3.3 nC Hexfet Power Mosfet Surface Mount - MICRO-3 |
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