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| 型号： | IRLML2803TR |
| 厂商： | International Rectifier |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 1.2A SOT-23 |
| 标准包装： | 1 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 250 毫欧 @ 910mA，10V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 85pF @ 25V |
| 功率 - 最大： | 540mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | Micro3?/SOT-23 |
| 包装： | 剪切带 (CT) |
| 其它名称： | *IRLML2803TR IRLML2803 IRLML2803-ND IRLML2803CT |
IRLML2803
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
0.25 V GS = 10V, I D = 0.91A ?
0.40 V GS = 4.5V, I D = 0.46A ?
1.0 V DS = 24V, V GS = 0V
25 V DS = 24V, V GS = 0V, T J = 125°C
-100 V GS = -20V
100 V GS = 20V
??? I D = 0.91A
??? R G = 6.2 Ω
V (BR)DSS
Δ V (BR)DSS / Δ T J
R DS(on)
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
C iss
C oss
C rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
30
???
???
???
1.0
0.87
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
0.029
???
???
???
???
???
???
???
???
3.3
0.48
1.1
3.9
4.0
9.0
1.7
85
34
15
??? V V GS = 0V, I D = 250μA
??? V/°C Reference to 25°C, I D = 1mA
Ω
??? V V DS = V GS , I D = 250μA
??? S V DS = 10V, I D = 0.46A
μA
nA
5.0 I D = 0.91A
0.72 nC V DS = 24V
1.7 V GS = 10V, See Fig. 6 and 9 ?
??? V DD = 15V
ns
??? R D = 16 Ω, See Fig. 10 ?
??? V GS = 0V
??? pF V DS = 25V
??? ? = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
I SM
V SD
t rr
Q rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ?
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
???
???
???
???
???
???
???
???
26
22
0.54
7.3
1.2
40
32
A
V
ns
nC
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T J = 25°C, I S = 0.91A, V GS = 0V ?
T J = 25°C, I F = 0.91A
di/dt = 100A/μs ?
G
D
S
Notes:
? Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
? I SD ≤ 0.91A, di/dt ≤ 120A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 150°C
www.irf.com
? Pulse width ≤ 300μs; duty cycle ≤ 2%.
? Surface mounted on FR-4 board, t ≤ 5sec.
? Limited by T Jmax , starting T J = 25°C, L = 9.4mH, R G = 25 Ω , I AS = 0.9A.
2
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