参数资料
型号: IRLML2803TR
厂商: International Rectifier
文件页数: 8/8页
文件大小: 0K
描述: MOSFET N-CH 30V 1.2A SOT-23
标准包装: 1
系列: HEXFET®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 1.2A
开态Rds(最大)@ Id, Vgs @ 25° C: 250 毫欧 @ 910mA,10V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 5nC @ 10V
输入电容 (Ciss) @ Vds: 85pF @ 25V
功率 - 最大: 540mW
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: Micro3?/SOT-23
包装: 剪切带 (CT)
其它名称: *IRLML2803TR
IRLML2803
IRLML2803-ND
IRLML2803CT
IRLML2803
Tape & Reel Information
SOT-23
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
TR
FEED DIRECTION
4.1 ( .161 )
3.9 ( .154 )
4.1 ( .161 )
3.9 ( .154 )
1.6 ( .062 )
1.5 ( .060 )
1.1 ( .043 )
0.9 ( .036 )
1.85 ( .072 )
1.65 ( .065 )
3.55 ( .139 )
3.45 ( .136 )
1.32 ( .051 )
1.12 ( .045 )
8.3 ( .326 )
7.9 ( .312 )
0.35 ( .013 )
0.25 ( .010 )
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 101N.Sepulveda Blvd, El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
www.irf.com
Visit us at www.irf.com for sales contact information . 12/2011
8
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