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| 型号： | IRLML5103TR |
| 厂商： | International Rectifier |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 760MA SOT-23 |
| 标准包装： | 1 |
| 系列： | HEXFET® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 760mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 600 毫欧 @ 600mA，10V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5.1nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 75pF @ 25V |
| 功率 - 最大： | 540mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | Micro3?/SOT-23 |
| 包装： | 剪切带 (CT) |
| 其它名称： | *IRLML5103TR IRLML5103 IRLML5103-ND IRLML5103CT |
IRLML5103
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
0.60 V GS = -10V, I D = -0.60A ?
1.0 V GS = -4.5V, I D = -0.30A ?
-1.0 V DS = -24V, V GS = 0V
-25 V DS = -24V, V GS = 0V, T J = 125°C
-100 V GS = -20V
100 V GS = 20V
??? R G = 6.2 Ω
V (BR)DSS
Δ V (BR)DSS / Δ T J
R DS(ON)
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
C iss
C oss
C rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-30
???
???
???
-1.0
0.44
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
-0.029
???
???
???
???
???
???
???
???
3.4
0.52
1.1
10
8.2
23
16
75
37
18
??? V V GS = 0V, I D = -250μA
??? V/°C Reference to 25°C, I D = -1mA
Ω
??? V V DS = V GS , I D = -250μA
??? S V DS = -10V, I D = -0.30A
μA
nA
5.1 I D = -0.60A
0.78 nC V DS = -24V
1.7 V GS = -10V, See Fig. 6 and 9 ?
??? V DD = -15V
??? I D = -0.60A
ns
??? R D = 25 Ω, See Fig. 10 ?
??? V GS = 0V
??? pF V DS = -25V
??? ? = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
I SM
V SD
t rr
Q rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ?
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
???
???
???
???
???
??? -0.54
??? -4.8
???
-1.2
26
39
20
30
A
V
ns
nC
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T J = 25°C, I S = -0.60A, V GS = 0V ?
T J = 25°C, I F = -0.60A
di/dt = 100A/μs ?
G
D
S
Notes:
? Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
? Pulse width ≤ 300μs; duty cycle ≤ 2%.
? I SD ≤ -0.60A, di/dt ≤ 110A/μs, V DD ≤ V (BR)DSS , ? Surface mounted on FR-4 board, t ≤ 5sec.
T J ≤ 150°C
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