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| 型号： | IRLMS6702TR |
| 厂商： | International Rectifier |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 2.4A 6-TSOP |
| 标准包装： | 1 |
| 系列： | HEXFET® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 200 毫欧 @ 1.6A，4.5V |
| Id 时的 Vgs(th)（最大）： | 700mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 8.8nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 210pF @ 15V |
| 功率 - 最大： | 1.7W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-LSOP（0.063"，1.60mm 宽） |
| 供应商设备封装： | Micro6?（TSOP-6） |
| 包装： | 剪切带 (CT) |
| 其它名称： | *IRLMS6702TR IRLMS6702 IRLMS6702CT |
IRLMS6702
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max. Units
Conditions
V (BR)DSS
Drain-to-Source Breakdown Voltage
-20
??? ??? V V GS = 0V, I D = -250μA
? V (BR)DSS / ? T J Breakdown Voltage Temp. Coefficient
???
-0.005 ??? V/°C Reference to 25°C, I D = -1mA
??? 0.200 V GS = -4.5V, I D = -1.6A ?
??? 0.375 V GS = -2.7V, I D = -0.80A ?
??? -1.0 V DS = -16V, V GS = 0V
??? -25 V DS = -16V, V GS = 0V, T J = 125°C
??? -100 V GS = -12V
??? 100 V GS = 12V
20 ??? I D = -1.6A
21 ??? R G = 6.0 ?
R DS(on)
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
C iss
C oss
C rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
???
???
-0.70
1.5
???
???
???
???
???
???
???
???
???
???
???
???
???
???
?
??? ??? V V DS = V GS , I D = -250μA
??? ??? S V DS = -10V, I D = -0.80A
μA
nA
5.8 8.8 I D = -1.6A
1.8 2.6 nC V DS = -16V
2.1 3.1 V GS = -4.5V, See Fig. 6 and 9 ?
13 ??? V DD = -10V
ns
18 ??? R D = 6.1 ?, See Fig. 10 ?
210 ??? V GS = 0V
130 ??? pF V DS = -15V
73 ??? ? = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
I SM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ?
???
???
???
???
-1.7
-13
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
V SD
t rr
Q rr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
???
???
???
???
25
15
-1.2
37
22
V
ns
nC
T J = 25°C, I S = -1.6A, V GS = 0V ?
T J = 25°C, I F = -1.6A
di/dt = -100A/μs ?
Notes:
? Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
? I SD ≤ -1.6A, di/dt ≤ -100A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 150°C
2
? Pulse width ≤ 300μs; duty cycle ≤ 2%.
? Surface mounted on FR-4 board, t ≤ 5sec.
www.irf.com
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相关代理商/技术参数 |
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|---|---|
| IRLMS6702TRHR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 20V 2.4A 6-Pin Micro T/R 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 20V 2.4A 6PIN MICRO6 - Tape and Reel |
| IRLMS6702TRPBF | 功能描述:MOSFET MOSFT P-Ch -2.3A 200mOhm 5.8nC LogLvl RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLMS6702TRPBF | 制造商:International Rectifier 功能描述:MOSFET TRANSISTOR POWER DISSIPATION:1.7W |
| IRLMS6802 | 制造商:International Rectifier 功能描述:MOSFET P LOGIC MICRO-6 |
| IRLMS6802PBF | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET Power MOSFET |
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