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参数资料
| 型号： | IRS21867SPBF |
| 厂商： | International Rectifier |
| 文件页数： | 15/21页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER |
| 标准包装： | 95 |
| 系列： | * |
IRS21867S
Figure 16: Negative V S transient SOA for IRS2607 @ VBS=15V
Even though the IRS21867 has been shown able to handle these large negative V S transient conditions, it is highly
recommended that the circuit designer always limit the negative V S transients as much as possible by careful PCB
layout and component use.
PCB Layout Tips
Distance between high and low voltage components: It’s strongly recommended to place the components tied to the
floating voltage pins (V B and V S ) near the respective high voltage portions of the device. Please see the Case
Outline information in this datasheet for the details.
Ground Plane: In order to minimize noise coupling, the ground plane should not be placed under or near the
high voltage floating side.
Gate Drive Loops: Current loops behave like antennas and are able to receive and transmit EM noise (see
Figure 17). In order to reduce the EM coupling and improve the power switch turn on/off performance, the
gate drive loops must be reduced as much as possible. Moreover, current can be injected inside the gate
drive loop via the IGBT collector-to-gate parasitic capacitance. The parasitic auto-inductance of the gate
loop contributes to developing a voltage across the gate-emitter, thus increasing the possibility of a self
turn-on effect.
www.irf.com
15
? 2010 International Rectifier
相关PDF资料 |
PDF描述 |
|---|---|
| IRS21952SPBF | IC DVR HISIDE DUAL LOSIDE 16SOIC |
| IRS21953SPBF | IC DVR HISIDE DUAL LOSIDE 16SOIC |
| IRS21956SPBF | IC DVR HI SIDE/DUAL LOW 20-SOIC |
| IRS21962SPBF | IC DVR HI SIDE DUAL 600V 16-SOIC |
| IRS2301SPBF | IC DVR HI/LOW SIDE 600V 8-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRS21867STRPBF | 功能描述:功率驱动器IC Hi CUR Iout = 4A robust HS/LS Gt Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS21867STRPBF | 制造商:International Rectifier 功能描述:IC, IGBT / MOSFET, 170 ns, SOIC-8 |
| IRS2186PBF | 功能描述:功率驱动器IC Hi&Lw Sd Drvr capbl of 4A & 4A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2186PBF | 制造商:International Rectifier 功能描述:MOSFET Driver IC 制造商:International Rectifier 功能描述:IC, MOSFET DRIVER, HIGH/LOW SIDE, DIP-8 |
| IRS2186SPbF | 功能描述:功率驱动器IC 3-Phase Bridge DRVR 600V 10V to 20V RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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