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参数资料
| 型号： | IRS21867SPBF |
| 厂商： | International Rectifier |
| 文件页数： | 16/21页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER |
| 标准包装： | 95 |
| 系列： | * |
IRS21867S
Figure 17: Antenna Loops
Supply Capacitor: It is recommended to place a bypass capacitor (C IN ) between the V CC and COM pins. A
ceramic 1 μF ceramic capacitor is suitable for most applications. This component should be placed as close
as possible to the pins in order to reduce parasitic elements.
Routing and Placement:
Power stage PCB parasitic elements can contribute to large negative voltage
transients at the switch node; it is recommended to limit the phase voltage negative transients. In order to
avoid such conditions, it is recommended to 1) minimize the high-side emitter to low-side collector distance,
and 2) minimize the low-side emitter to negative bus rail stray inductance. However, where negative V S
spikes remain excessive, further steps may be taken to reduce the spike. This includes placing a resistor (5
or less) between the V S pin and the switch node (see Figure 18), and in some cases using a clamping
diode between COM and V S (see Figure 19). See DT04-4 at www.irf.com for more detailed information.
Figure 18: V S resistor
Figure 19: V S clamping diode
Additional Documentation
Several technical documents related to the use of HVICs are available at www.irf.com ; use the Site Search
function and the document number to quickly locate them. Below is a short list of some of these documents.
DT97-3: Managing Transients in Control IC Driven Power Stages
DT04-4: Using Monolithic High Voltage Gate Drivers
AN-978: HV Floating MOS-Gate Driver ICs
www.irf.com
16
? 2010 International Rectifier
相关PDF资料 |
PDF描述 |
|---|---|
| IRS21952SPBF | IC DVR HISIDE DUAL LOSIDE 16SOIC |
| IRS21953SPBF | IC DVR HISIDE DUAL LOSIDE 16SOIC |
| IRS21956SPBF | IC DVR HI SIDE/DUAL LOW 20-SOIC |
| IRS21962SPBF | IC DVR HI SIDE DUAL 600V 16-SOIC |
| IRS2301SPBF | IC DVR HI/LOW SIDE 600V 8-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRS21867STRPBF | 功能描述:功率驱动器IC Hi CUR Iout = 4A robust HS/LS Gt Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS21867STRPBF | 制造商:International Rectifier 功能描述:IC, IGBT / MOSFET, 170 ns, SOIC-8 |
| IRS2186PBF | 功能描述:功率驱动器IC Hi&Lw Sd Drvr capbl of 4A & 4A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2186PBF | 制造商:International Rectifier 功能描述:MOSFET Driver IC 制造商:International Rectifier 功能描述:IC, MOSFET DRIVER, HIGH/LOW SIDE, DIP-8 |
| IRS2186SPbF | 功能描述:功率驱动器IC 3-Phase Bridge DRVR 600V 10V to 20V RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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