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参数资料
| 型号： | IRS21867SPBF |
| 厂商： | International Rectifier |
| 文件页数： | 3/21页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER |
| 标准包装： | 95 |
| 系列： | * |
Qualification Information
Industrial
IRS21867S
Description
The IRS21867 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low
side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized
monolithic construction. Low VCC operation allows use in battery powered applications. The logic input is
compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high
pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used
to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
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Qualification Level
Comments: This family of ICs has passed JEDEC’s
Industrial qualification. IR’s Consumer qualification level is
granted by extension of the higher Industrial level.
MSL2
Moisture Sensitivity Level
SOIC8N
???
260°C
(per IPC/JEDEC J-STD-020)
ESD
IC Latch-Up Test
RoHS Compliant
Machine Model
Human Body Model
Class A
(per JEDEC standard JESD22-A115)
Class 2
(per EIA/JEDEC standard EIA/JESD22-A114)
Class I, Level A
(per JESD78)
Yes
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Qualification standards can be found at International Rectifier’s web site http://www.irf.com/
Higher qualification ratings may be available should the user have such requirements. Please contact
your International Rectifier sales representative for further information.
??? Higher MSL ratings may be available for the specific package types listed here. Please contact your
International Rectifier sales representative for further information.
www.irf.com
3
? 2010 International Rectifier
相关PDF资料 |
PDF描述 |
|---|---|
| IRS21952SPBF | IC DVR HISIDE DUAL LOSIDE 16SOIC |
| IRS21953SPBF | IC DVR HISIDE DUAL LOSIDE 16SOIC |
| IRS21956SPBF | IC DVR HI SIDE/DUAL LOW 20-SOIC |
| IRS21962SPBF | IC DVR HI SIDE DUAL 600V 16-SOIC |
| IRS2301SPBF | IC DVR HI/LOW SIDE 600V 8-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRS21867STRPBF | 功能描述:功率驱动器IC Hi CUR Iout = 4A robust HS/LS Gt Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS21867STRPBF | 制造商:International Rectifier 功能描述:IC, IGBT / MOSFET, 170 ns, SOIC-8 |
| IRS2186PBF | 功能描述:功率驱动器IC Hi&Lw Sd Drvr capbl of 4A & 4A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2186PBF | 制造商:International Rectifier 功能描述:MOSFET Driver IC 制造商:International Rectifier 功能描述:IC, MOSFET DRIVER, HIGH/LOW SIDE, DIP-8 |
| IRS2186SPbF | 功能描述:功率驱动器IC 3-Phase Bridge DRVR 600V 10V to 20V RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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