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参数资料
| 型号： | IRS21867SPBF |
| 厂商： | International Rectifier |
| 文件页数： | 5/21页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER |
| 标准包装： | 95 |
| 系列： | * |
IRS21867S
Dynamic Electrical Characteristics
V CC = V BS = 15V, C L = 1000 pF, T A = 25°C unless otherwise specified.
Symbol
Definition
Min Typ Max Units Test Conditions
t on
Turn-on propagation delay
—
170
250
V S = 0V
t off
MT
t r
t f
Turn-off propagation delay
Delay matching | t on – t off |
Turn-on rise time
Turn-off fall time
—
—
—
—
170
—
22
18
250
35
38
30
ns
V S = 0V or 600V
V S = 0V
Static Electrical Characteristics
V CC = V BS = 15V,, and T A = 25°C unless otherwise specified. The V IN , and I IN parameters are referenced to
COM and are applicable to the respective input leads: HIN, and LIN. The V O , and I O parameters are
referenced to V S /COM and are applicable to the respective output leads: HO and LO.
Symbol
Definition
Min
Typ Max Units Test Conditions
V IH
V IL
V OH
V OL
I LK
I QBS
I QCC
I IN+
I IN-
V CCUV+
V BSUV+
Logic “1” input voltage for HO & LO
Logic “0” input voltage for HO & LO
High level output voltage, V CC or V BS - V O
Low level output voltage, V O
Offset supply leakage current
Quiescent V BS supply current
Quiescent V CC supply current
Logic “1” input bias current
Logic “0” input bias current
V CC and V BS supply undervoltage positive
going threshold
2.5
—
—
—
—
20
50
—
—
5.34
— —
— 0.8
— 1.4
— 0.15
— 50
60 150
120 240
250 —
— 5.0
6
6.66
V
A
V CC = 10V to 20V
I O = 0mA
I O = 20mA
V B = V S = 600 V
V IN = 0V or 5V
HIN = LIN = 5V
HIN = LIN = 0V
V CCUV-
V BSUV-
V CCUVH
V BSUVH
V CC and V BS supply undervoltage negative
going threshold
V CC and V BS supply undervoltage Hysteresis
4.90 5.50 6.10
0.5
V
I O+
I O-
Output high short circuit pulsed current
Output low short circuit pulsed current
4.0
4.0
A
V O = 0V,
PW ≤ 10 s
V O = 15V,
PW ≤ 10 s
www.irf.com
5
? 2010 International Rectifier
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRS21867STRPBF | 功能描述:功率驱动器IC Hi CUR Iout = 4A robust HS/LS Gt Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS21867STRPBF | 制造商:International Rectifier 功能描述:IC, IGBT / MOSFET, 170 ns, SOIC-8 |
| IRS2186PBF | 功能描述:功率驱动器IC Hi&Lw Sd Drvr capbl of 4A & 4A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2186PBF | 制造商:International Rectifier 功能描述:MOSFET Driver IC 制造商:International Rectifier 功能描述:IC, MOSFET DRIVER, HIGH/LOW SIDE, DIP-8 |
| IRS2186SPbF | 功能描述:功率驱动器IC 3-Phase Bridge DRVR 600V 10V to 20V RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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