参数资料
型号: IRS2552DSPBF
厂商: International Rectifier
文件页数: 15/32页
文件大小: 0K
描述: IC BALLAST CTLR CCFL/EEFL 16SOIC
标准包装: 45
类型: CCFL/EEFL 控制器
频率: 39 ~ 69 kHz
电流 - 电源: 10mA
电流 - 输出: 450mA
电源电压: 10.6 V ~ 15.6 V
工作温度: -40°C ~ 125°C
封装/外壳: 16-SOIC(0.154",3.90mm 宽)
供应商设备封装: 16-SOIC N
包装: 管件
IRS2552D
Application Information and Additional Details
Information regarding the following topics is included as subsections within this section of the datasheet.
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IGBT/MOSFET Gate Drive
Undervoltage Lockout Protection
Oscillator
Deadtime
Ignition
Run Mode
Lamp Current Control
Frequency, Current and Deadtime Calculation
Dimming Function
Soft Start
PCB Layout Tips
Additional Documentation
IGBT/MOSFET Gate Drive
The IRS2552D HVICs are designed to drive up to two MOSFET or IGBT power devices. Figures 1 and 2 illustrate
several parameters associated with the gate drive functionality of the HVIC. The output current of the HVIC, used to
drive the gate of the power switch, is defined as I O . The voltage that drives the gate of the external power switch is
defined as V HO for the high-side power switch and V LO for the low-side power switch; this parameter is sometimes
generically called V OUT and in this case does not differentiate between the high-side or low-side output voltage.
V B
(or V CC )
I O+
HO
(or LO)
V S
(or COM)
+
V HO (or V LO )
-
Figure 1: HVIC sourcing current
Figure 2: HVIC sinking current
Undervoltage Lock-Out
The IRS2552D includes an under voltage lockout circuit such that it remains in micro-power mode until the
voltage at VCC pin exceeds the V CCUV+ threshold. When V CC exceeds the V CCUV+ threshold the IRS2552D
oscillator starts up and gate drive signals appear at the LO and HO outputs, provided the ENABLE pin is
connected to a voltage source above V ENATH . The LO output will always go high first in order to pre-charge the
bootstrap capacitor before the IRS2552D begins normal operation.
www.irf.com
15
? 2009 International Rectifier
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