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| 型号： | IRS2608DSTRPBF |
| 厂商： | International Rectifier |
| 文件页数： | 11/26页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER MOSFET/IGBT 8-SOIC |
| 标准包装： | 1 |
| 配置： | 半桥 |
| 输入类型： | 差分 |
| 延迟时间： | 250ns |
| 电流 - 峰： | 200mA |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 600V |
| 电源电压： | 10 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 标准包装 |
| 产品目录页面： | 1382 (CN2011-ZH PDF) |
| 其它名称： | IRS2608DSTRPBFDKR |
IRS2608DSPbF
Integrated Bootstrap Functionality
The IRS2608D embeds an integrated bootstrap FET that allows an alternative drive of the bootstrap supply for a wide
range of applications.
A bootstrap FET is connected between the floating supply V B and V CC (see Fig. 8).
Vcc
BootFet
Vb
Figure 8: Semplified BootFET connection
The bootstrap FET is suitable for most PWM modulation schemes, including trapezoidal control, and can be used
either in parallel with the external bootstrap network (diode+ resistor) or as a replacement of it. The use of the
integrated bootstrap as a replacement of the external bootstrap network may have some limitations in the following
situations:
?
?
When the motor runs at a very low current (so that the negative phase voltage decay can be longer than
20us) and complementary PWM is not used.
At a very high PWM duty cycle due to the bootstrap FET equivalent resistance (R BS , see page 3).
The summary for the bootstrap state follows:
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?
Bootstrap turns-off (immediately) or stays off when at least one of the following conditions are met :
1- HO goes/is high
2- V B goes/is high (> 1.1*V CC )
Bootstrap turns-on when :
1- LO is high (low side is on) AND V B is low (< 1.1(V CC ))
2- LO and HO are low after a LIN transition from H to L (HB output is in tri-state) AND V B goes low
(<1.1*V CC ) before a fixed time of 20us.
3- LO and HO are low after a HIN transition from H to L (HB output is in tri-state) AND V B goes low
(<1.1(V CC )) before a retriggerable time of 20us. In this case the time counter is kept in reset state until
VB goes high (>1.1V CC ). Please refer to the BootFET timing diagram for more details.
www.irf.com
11
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PDF描述 |
|---|---|
| IRS2609DSPBF | IC DVR MOSFET/IGBT N-CH 8-SOIC |
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| IRS26310DJTRPBF | IC DRIVER MOSFET/IGBT 44-PLCC |
| IRS4427PBF | IC MOSFET DRIVER |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRS2609DSPBF | 功能描述:功率驱动器IC Half-Bridge Driver 600V 120mA 530ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2609DSPBF_11 | 制造商:IRF 制造商全称:International Rectifier 功能描述:HALF-BRIDGE DRIVER |
| IRS2609DSTRPBF | 功能描述:功率驱动器IC Hlf Brdg Drvr 600V .250A Sngl Inpt RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS26302DJ | 制造商:IRF 制造商全称:International Rectifier 功能描述:FULLY PROTECTED 3-PHASE BRIDGE PLUS ONE GATE DRIVER |
| IRS26302DJPBF | 功能描述:功率驱动器IC 3-Phase Bridge DRVR 600V 10 to 20V 290ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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