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参数资料
| 型号： | IRS2608DSTRPBF |
| 厂商： | International Rectifier |
| 文件页数： | 16/26页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER MOSFET/IGBT 8-SOIC |
| 标准包装： | 1 |
| 配置： | 半桥 |
| 输入类型： | 差分 |
| 延迟时间： | 250ns |
| 电流 - 峰： | 200mA |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 600V |
| 电源电压： | 10 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 标准包装 |
| 产品目录页面： | 1382 (CN2011-ZH PDF) |
| 其它名称： | IRS2608DSTRPBFDKR |
IRS2608DSPbF
Figure 19: Antenna Loops
Supply Capacitor: It is recommended to place a bypass capacitor (C IN ) between the V CC and COM pins. A ceramic 1 μF
ceramic capacitor is suitable for most applications. This component should be placed as close as possible to the pins in
order to reduce parasitic elements.
Routing and Placement: Power stage PCB parasitic elements can contribute to large negative voltage transients at the
switch node; it is recommended to limit the phase voltage negative transients. In order to avoid such conditions, it is
recommended to 1) minimize the high-side emitter to low-side collector distance, and 2) minimize the low-side emitter to
negative bus rail stray inductance. However, where negative V S spikes remain excessive, further steps may be taken to
reduce the spike. This includes placing a resistor (5 or less) between the V S pin and the switch node (see Figure 20),
and in some cases using a clamping diode between COM and V S (see Figure 21). See DT04-4 at www.irf.com for more
detailed information.
Figure 20: V S resistor
Figure 21: V S clamping diode
Integrated Bootstrap FET limitation
The integrated Bootstrap FET functionality has an operational limitation under the following bias conditions applied
to the HVIC:
?
?
VCC pin voltage = 0V
VS or VB pin voltage > 0
AND
In the absence of a VCC bias, the integrated bootstrap FET voltage blocking capability is compromised and a
current conduction path is created between VCC & VB pins, as illustrated in Fig.22 below, resulting in power loss
and possible damage to the HVIC.
www.irf.com
16
相关PDF资料 |
PDF描述 |
|---|---|
| IRS2609DSPBF | IC DVR MOSFET/IGBT N-CH 8-SOIC |
| IRS26302DJTRPBF | IC GATE DRIVER 3PH BRIDGE 44PLCC |
| IRS26310DJTRPBF | IC DRIVER MOSFET/IGBT 44-PLCC |
| IRS4427PBF | IC MOSFET DRIVER |
| IRS4427SPBF | IC DVR LOW SIDE DUAL 8-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRS2609DSPBF | 功能描述:功率驱动器IC Half-Bridge Driver 600V 120mA 530ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2609DSPBF_11 | 制造商:IRF 制造商全称:International Rectifier 功能描述:HALF-BRIDGE DRIVER |
| IRS2609DSTRPBF | 功能描述:功率驱动器IC Hlf Brdg Drvr 600V .250A Sngl Inpt RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS26302DJ | 制造商:IRF 制造商全称:International Rectifier 功能描述:FULLY PROTECTED 3-PHASE BRIDGE PLUS ONE GATE DRIVER |
| IRS26302DJPBF | 功能描述:功率驱动器IC 3-Phase Bridge DRVR 600V 10 to 20V 290ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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