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参数资料
| 型号： | IRS2608DSTRPBF |
| 厂商： | International Rectifier |
| 文件页数： | 8/26页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER MOSFET/IGBT 8-SOIC |
| 标准包装： | 1 |
| 配置： | 半桥 |
| 输入类型： | 差分 |
| 延迟时间： | 250ns |
| 电流 - 峰： | 200mA |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 600V |
| 电源电压： | 10 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 标准包装 |
| 产品目录页面： | 1382 (CN2011-ZH PDF) |
| 其它名称： | IRS2608DSTRPBFDKR |
IRS2608DSPbF
Switching and Timing Relationships
The relationships between the input and output signals of the IRS2608D are illustrated below in Figures 3, 4. From
these figures, we can see the definitions of several timing parameters (i.e., PW IN , PW OUT , t ON , t OFF , t R , and t F ) associated
with this device.
LIN
50%
50%
LO
t on
t r
10%
90%
t off
90%
t f
10%
Figure 3: Switching time waveforms
Figure 4: Input/output timing diagram
Deadtime
This family of HVICs features integrated deadtime protection circuitry. The deadtime for these ICs is fixed; other ICs within IR’s HVIC
portfolio feature programmable deadtime for greater design flexibility. The deadtime feature inserts a time period (a minimum
deadtime) in which both the high- and low-side power switches are held off; this is done to ensure that the power switch being turned
off has fully turned off before the second power switch is turned on. This minimum deadtime is automatically inserter whenever the
external deadtime is shorter than DT; external deadtimes larger than DT are not modified by the gate driver. Figure 5 illustrates the
deadtime period and the relationship between the output gate signals.
The deadtime circuitry of the IRS2608D is matched with respect to the high- and low-side outputs. Figure 5 defines the two deadtime
parameters (i.e., DT LO-HO and DT HO-LO ); the deadtime matching parameter (MDT) associated with the IRS2608D specifies the
maximum difference between DT LO-HO and DT HO-LO .
Matched Propagation Delays
The IRS2608D family of HVICs is designed with propagation delay matching circuitry. With this feature, the IC’s
response at the output to a signal at the input requires approximately the same time duration (i.e., t ON , t OFF ) for both the
low-side channels and the high-side channels; the maximum difference is specified by the delay matching parameter
(MT). The propagation turn-on delay (t ON ) of the IRS2608D is matched to the propagation turn-on delay (t OFF ).
www.irf.com
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相关PDF资料 |
PDF描述 |
|---|---|
| IRS2609DSPBF | IC DVR MOSFET/IGBT N-CH 8-SOIC |
| IRS26302DJTRPBF | IC GATE DRIVER 3PH BRIDGE 44PLCC |
| IRS26310DJTRPBF | IC DRIVER MOSFET/IGBT 44-PLCC |
| IRS4427PBF | IC MOSFET DRIVER |
| IRS4427SPBF | IC DVR LOW SIDE DUAL 8-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRS2609DSPBF | 功能描述:功率驱动器IC Half-Bridge Driver 600V 120mA 530ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2609DSPBF_11 | 制造商:IRF 制造商全称:International Rectifier 功能描述:HALF-BRIDGE DRIVER |
| IRS2609DSTRPBF | 功能描述:功率驱动器IC Hlf Brdg Drvr 600V .250A Sngl Inpt RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS26302DJ | 制造商:IRF 制造商全称:International Rectifier 功能描述:FULLY PROTECTED 3-PHASE BRIDGE PLUS ONE GATE DRIVER |
| IRS26302DJPBF | 功能描述:功率驱动器IC 3-Phase Bridge DRVR 600V 10 to 20V 290ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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