- 您现在的位置：买卖IC网 > Datasheet目录333 > IRS26302DJTRPBF (International Rectifier)IC GATE DRIVER 3PH BRIDGE 44PLCC Datasheet资料下载
参数资料
| 型号： | IRS26302DJTRPBF |
| 厂商： | International Rectifier |
| 文件页数： | 23/53页 |
| 文件大小： | 0K |
| 描述： | IC GATE DRIVER 3PH BRIDGE 44PLCC |
| 标准包装： | 1 |
| 配置： | 3 相桥 |
| 输入类型： | 非反相 |
| 延迟时间： | 320ns |
| 电流 - 峰： | 200mA |
| 配置数： | 1 |
| 输出数： | 3 |
| 高端电压 - 最大（自引导启动）： | 600V |
| 电源电压： | 10 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 44-PLCC（32 引线） |
| 供应商设备封装： | 44-PLCC，32 引线 |
| 包装： | 标准包装 |
| 产品目录页面： | 1382 (CN2011-ZH PDF) |
| 其它名称： | IRS26302DJTRPBFDKR |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页当前第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页
IRS26302DJ
The length of the fault clear time period can be determined by using the formula below.
v C (t) = V f (1-e
-t/RC
)
t FLTCLR = -(R RCIN C RCIN )ln(1-V RCIN,TH /V CC )
Over-Current Protections
The IRS26302DJ HVICs are equipped with an ITRIP, GF and PFCtrip input pin. These functionality can be used to
detect over-current events in the DC- bus, in the DC+ bus, in the PFC section and Ground related. Once the HVIC
detects an over-current event, the outputs are shutdown, a fault is reported through the FAULT pin, and RCIN is
pulled to V SS .
The level of current at which the over-current protection is initiated is determined by the resistor network (i.e., R 0 , R 1 ,
and R 2 ) connected to ITRIP as shown in Figure 14, and the ITRIP threshold (V IT,TH+ ). The circuit designer will need to
determine the maximum allowable level of current in the DC- bus and select R 0 , R 1 , and R 2 such that the voltage at
node V X reaches the over-current threshold (V IT,TH+ ) at that current level.
V IT,TH+ = R 0 I DC- (R 1 /(R 1 +R 2 ))
Figure 14: Programming the over-current protection
For example, a typical value for resistor R 0 could be 50 m . The voltage of the ITRIP pin should not be allowed to
exceed 5 V; if necessary, an external voltage clamp may be used.
The shunt resistor or resistor network for GF or PCFtrip can be determined according to GF, PCFtrip threshold and
level of protection current. The GF pin should not be outside this range (VDC+0.3V, VDC-5V) and PCFtrip should not
be outside (Vcc+0.3V, Vss-5V); if necessary, an external voltage clamp may be used.
Over-Temperature Shutdown Protection
The ITRIP input of the IRS26302DJ can also be used to detect over-temperature events in the system and initiate a
shutdown of the HVIC (and power switches) at that time. In order to use this functionality, the circuit designer will
need to design the resistor network as shown in Figure 15 and select the maximum allowable temperature.
This network consists of a thermistor and two standard resistors R 3 and R 4 . As the temperature changes, the
resistance of the thermistor will change; this will result in a change of voltage at node V X . The resistor values should
www.irf.com
23
? 2009 International Rectifier
相关PDF资料 |
PDF描述 |
|---|---|
| IRS26310DJTRPBF | IC DRIVER MOSFET/IGBT 44-PLCC |
| IRS4427PBF | IC MOSFET DRIVER |
| IRS4427SPBF | IC DVR LOW SIDE DUAL 8-SOIC |
| IRS4428STRPBF | IC DVR LOW SIDE DUAL 8-SOIC |
| ISL2100AAR3Z | IC DVR HALF-BRDG HF 100V 2A 9DFN |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRS26310DJPBF | 功能描述:功率驱动器IC 3-Phase DC BUS 600V 200mA 530ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS26310DJTRPBF | 功能描述:功率驱动器IC Pwr MOSFT & IGBT Drvr HiVolt Hi Spd RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS27951 | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
| IRS27951S | 制造商:IRF 制造商全称:International Rectifier 功能描述:Programmable minimum and maximum switching frequency |
| IRS27951SPBF | 功能描述:功率驱动器IC 600V HALF BRDG HI VTG CTRLLER IC RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。