- 您现在的位置：买卖IC网 > Datasheet目录333 > IRS26302DJTRPBF (International Rectifier)IC GATE DRIVER 3PH BRIDGE 44PLCC Datasheet资料下载
参数资料
| 型号： | IRS26302DJTRPBF |
| 厂商： | International Rectifier |
| 文件页数： | 29/53页 |
| 文件大小： | 0K |
| 描述： | IC GATE DRIVER 3PH BRIDGE 44PLCC |
| 标准包装： | 1 |
| 配置： | 3 相桥 |
| 输入类型： | 非反相 |
| 延迟时间： | 320ns |
| 电流 - 峰： | 200mA |
| 配置数： | 1 |
| 输出数： | 3 |
| 高端电压 - 最大（自引导启动）： | 600V |
| 电源电压： | 10 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 44-PLCC（32 引线） |
| 供应商设备封装： | 44-PLCC，32 引线 |
| 包装： | 标准包装 |
| 产品目录页面： | 1382 (CN2011-ZH PDF) |
| 其它名称： | IRS26302DJTRPBFDKR |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页当前第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页
IRS26302DJ
Integrated Bootstrap Functionality
The IRS26302DJ features integrated high-voltage bootstrap MOSFETs that eliminate the need of the external
bootstrap diodes and resistors in many applications.
There is one bootstrap MOSFET for each high-side output channel and it is connected between the V CC supply and
its respective floating supply (i.e., V B1 , V B2 , V B3 ); see Figure 24 for an illustration of this internal connection.
The integrated bootstrap MOSFET is turned on only during the time when LO is ‘high’, and it has a limited source
current due to R BS . The V BS voltage will be charged each cycle depending on the on-time of LO and the value of the
C BS capacitor, the drain-source (collector-emitter) drop of the external IGBT (or MOSFET), and the low-side free-
wheeling diode drop.
The bootstrap MOSFET of each channel follows the state of the respective low-side output stage (i.e., the bootstrap
MOSFET is ON when LO is high, it is OFF when LO is low), unless the V B voltage is higher than approximately 110%
of V CC . In that case, the bootstrap MOSFET is designed to remain off until V B returns below that threshold; this
concept is illustrated in Figure 25.
V B1
V CC
V B2
V B3
Figure 24: Internal bootstrap MOSFET connection
Figure 25: Bootstrap MOSFET state diagram
A bootstrap MOSFET is suitable for most of the PWM modulation schemes and can be used either in parallel with the
external bootstrap network (i.e., diode and resistor) or as a replacement of it. The use of the integrated bootstrap as
a replacement of the external bootstrap network may have some limitations. An example of this limitation may arise
when this functionality is used in non-complementary PWM schemes (typically 6-step modulations) and at very high
PWM duty cycle. In these cases, superior performances can be achieved by using an external bootstrap diode in
parallel with the internal bootstrap network.
Bootstrap Power Supply Design
For information related to the design of the bootstrap power supply while using the integrated bootstrap functionality
of the IRS26302DJ, please refer to Application Note 1123 (AN-1123) entitled “Bootstrap Network Analysis: Focusing
on the Integrated Bootstrap Functionality.” This application note is available at www.irf.com .
For information related to the design of a standard bootstrap power supply (i.e., using an external discrete diode)
please refer to Design Tip 04-4 (DT04-4) entitled “Using Monolithic High Voltage Gate Drivers.” This design tip is
available at www.irf.com .
www.irf.com
29
? 2009 International Rectifier
相关PDF资料 |
PDF描述 |
|---|---|
| IRS26310DJTRPBF | IC DRIVER MOSFET/IGBT 44-PLCC |
| IRS4427PBF | IC MOSFET DRIVER |
| IRS4427SPBF | IC DVR LOW SIDE DUAL 8-SOIC |
| IRS4428STRPBF | IC DVR LOW SIDE DUAL 8-SOIC |
| ISL2100AAR3Z | IC DVR HALF-BRDG HF 100V 2A 9DFN |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRS26310DJPBF | 功能描述:功率驱动器IC 3-Phase DC BUS 600V 200mA 530ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS26310DJTRPBF | 功能描述:功率驱动器IC Pwr MOSFT & IGBT Drvr HiVolt Hi Spd RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS27951 | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
| IRS27951S | 制造商:IRF 制造商全称:International Rectifier 功能描述:Programmable minimum and maximum switching frequency |
| IRS27951SPBF | 功能描述:功率驱动器IC 600V HALF BRDG HI VTG CTRLLER IC RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。