- 您现在的位置：买卖IC网 > PDF目录296250 > IS61NVP204818-166TQ (INTEGRATED SILICON SOLUTION INC) 2M X 18 ZBT SRAM, 3.5 ns, PQFP100 PDF资料下载
参数资料
| 型号： | IS61NVP204818-166TQ |
| 厂商： | INTEGRATED SILICON SOLUTION INC |
| 元件分类： | SRAM |
| 英文描述： | 2M X 18 ZBT SRAM, 3.5 ns, PQFP100 |
| 封装： | TQFP-100 |
| 文件页数： | 19/22页 |
| 文件大小： | 221K |
| 代理商： | IS61NVP204818-166TQ |
6
Integrated Silicon Solution, Inc. — www.issi.com
Rev. 00A
05/02/07
IS61NLP102436/IS61NVP102436
IS61NLP204818/IS61NVP204818
SYNCHRONOUS TRUTH TABLE(1)
Address
Operation
Used
CE
CE2
CE
CE2
ADV
WE
BW
BWx
OE
CKE
CLK
Not Selected
N/A
H
X
L
X
L
↑
Not Selected
N/A
X
L
X
L
X
L
↑
Not Selected
N/A
X
H
L
X
L
↑
Not Selected Continue
N/A
X
H
X
L
↑
Begin Burst Read
External Address
L
H
L
H
X
L
↑
Continue Burst Read
Next Address
X
H
X
L
↑
NOP/Dummy Read
External Address
L
H
L
H
X
H
L
↑
Dummy Read
Next Address
X
H
X
H
L
↑
Begin Burst Write
External Address
L
H
L
X
L
↑
Continue Burst Write
Next Address
X
H
X
L
X
L
↑
NOP/Write Abort
N/A
L
H
L
H
X
L
↑
Write Abort
Next Address
X
H
X
H
X
L
↑
Ignore Clock
Current Address
X
H
↑
Notes:
1. "X" means don't care.
2. The rising edge of clock is symbolized by
↑
3. A continue deselect cycle can only be entered if a deselect cycle is executed first.
4.
WE = L means Write operation in Write Truth Table.
WE = H means Read operation in Write Truth Table.
5. Operation finally depends on status of asynchronous pins (ZZ and
OE).
BURST
READ
DESELECT
BURST
WRITE
BEGIN
READ
BEGIN
WRITE
READ
WRITE
READ
WRITE
BURST
DS
READ
DS
READ
WRITE
BURST
WRITE
READ
STATE DIAGRAM
相关PDF资料 |
PDF描述 |
|---|---|
| IS61SPS25632D-5TQ | 256K X 32 CACHE SRAM, 5 ns, PQFP100 |
| IS61VF102436A-6.5B3I | 1M X 36 CACHE SRAM, 6.5 ns, PBGA165 |
| IS62LV25616LL-70TI | x16 SRAM |
| IS62LV25616LL-85B | x16 SRAM |
| IS62LV25616LL-85BI | x16 SRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS61NVP204818A-166TQLI | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS61NVP25636A-200B2LI | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS61NVP25636A-200B3LI | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS61NVP25636A-200TQI | 功能描述:静态随机存取存储器 8Mb 256Kx36 200Mhz 2.5v I/O RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61NVP25636A-200TQI-TR | 功能描述:静态随机存取存储器 8Mb 256Kx36 200Mhz 2.5v I/O RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
发布紧急采购，3分钟左右您将得到回复。