参数资料
型号: IS61NVP204818-166TQ
厂商: INTEGRATED SILICON SOLUTION INC
元件分类: SRAM
英文描述: 2M X 18 ZBT SRAM, 3.5 ns, PQFP100
封装: TQFP-100
文件页数: 22/22页
文件大小: 221K
代理商: IS61NVP204818-166TQ
Integrated Silicon Solution, Inc. — www.issi.com
9
Rev. 00A
05/02/07
IS61NLP102436/IS61NVP102436
IS61NLP204818/IS61NVP204818
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
-200
-166
MAX
Symbol Parameter
Test Conditions
Temp.range
x18
x36
x18
x36
Unit
ICC
AC Operating
Device Selected,
Com.
450
400
mA
Supply Current
OE = VIH, ZZ
≤ VIL,
Ind.
475
450
All Inputs
≤ 0.2V or ≥ VDD – 0.2V,
typ.(2)
390
340
Cycle Time
≥ tKC min.
ISB
Standby Current
Device Deselected,
Com.
210
175
mA
TTL Input
VDD = Max.,
Ind.
220
185
All Inputs
≤ VIL or ≥ VIH,
ZZ
≤ VIL, f = Max.
ISBI
Standby Current
Device Deselected,
Com.
110
mA
CMOS Input
VDD = Max.,
Ind.
140
VIN
≤ VSS + 0.2V or ≥VDD – 0.2V
typ.(2)
75
f = 0
Note:
1. MODE pin has an internal pullup and should be tied to VDD or VSS. It exhibits ±100A maximum leakage current when tied to
VSS + 0.2V or
≥ VDD – 0.2V.
2. Typical values are measured at Vcc = 3.3V, TA = 25oC and not 100% tested.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
3.3V
2.5V
Symbol
Parameter
Test Conditions
Min.
Max.
Min.
Max.
Unit
VOH
Output HIGH Voltage
IOH = –4.0 mA (3.3V)
2.4
2.0
V
IOH = –1.0 mA
(2.5V)
VOL
Output LOW Voltage
IOL = 8.0 mA (3.3V)
0.4
0.4
V
IOL = 1.0 mA (2.5V)
VIH
Input HIGH Voltage
2.0
VDD + 0.3
1.7
VDD + 0.3
V
VIL
Input LOW Voltage
–0.3
0.8
–0.3
0.7
V
ILI
Input Leakage Current
VSS
≤ VIN ≤ VDD(1)
–5
5
–5
5
A
ILO
Output Leakage Current
VSS
≤ VOUT ≤ VDDQ, OE = VIH
–5
5
–5
5
A
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