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参数资料
| 型号： | IS61NVP204818-166TQ |
| 厂商： | INTEGRATED SILICON SOLUTION INC |
| 元件分类： | SRAM |
| 英文描述： | 2M X 18 ZBT SRAM, 3.5 ns, PQFP100 |
| 封装： | TQFP-100 |
| 文件页数： | 20/22页 |
| 文件大小： | 221K |
| 代理商： | IS61NVP204818-166TQ |
Integrated Silicon Solution, Inc. — www.issi.com
7
Rev. 00A
05/02/07
IS61NLP102436/IS61NVP102436
IS61NLP204818/IS61NVP204818
ASYNCHRONOUS TRUTH TABLE(1)
Operation
ZZ
OE
I/O STATUS
Sleep Mode
H
X
High-Z
Read
LL
DQ
L
H
High-Z
Write
L
X
Din, High-Z
Deselected
L
X
High-Z
Notes:
1. X means "Don't Care".
2. For write cycles following read cycles, the output buffers must be disabled with
OE, otherwise data bus
contention will occur.
3. Sleep Mode means power Sleep Mode where stand-by current does not depend on cycle time.
4. Deselected means power Sleep Mode where stand-by current depends on cycle time.
WRITE TRUTH TABLE (x18)
Operation
WE
BW
BWa
BW
BWb
READ
H
X
WRITE BYTE a
L
H
WRITE BYTE b
L
H
L
WRITE ALL BYTEs
L
WRITE ABORT/NOP
L
H
Notes:
1. X means "Don't Care".
2. All inputs in this table must beet setup and hold time around the rising edge of CLK.
WRITE TRUTH TABLE (x36)
Operation
WE
BW
BWa
BW
BWb
BW
BWc
BW
BWd
READ
H
X
WRITE BYTE a
L
H
WRITE BYTE b
L
H
L
H
WRITE BYTE c
L
H
L
H
WRITE BYTE d
L
H
L
WRITE ALL BYTEs
L
WRITE ABORT/NOP
L
H
Notes:
1. X means "Don't Care".
2. All inputs in this table must beet setup and hold time around the rising edge of CLK.
INTERLEAVED BURST ADDRESS TABLE (MODE = VDD or NC)
External Address
1st Burst Address
2nd Burst Address
3rd Burst Address
A1 A0
00
01
10
11
01
00
11
10
11
00
01
11
10
01
00
相关PDF资料 |
PDF描述 |
|---|---|
| IS61SPS25632D-5TQ | 256K X 32 CACHE SRAM, 5 ns, PQFP100 |
| IS61VF102436A-6.5B3I | 1M X 36 CACHE SRAM, 6.5 ns, PBGA165 |
| IS62LV25616LL-70TI | x16 SRAM |
| IS62LV25616LL-85B | x16 SRAM |
| IS62LV25616LL-85BI | x16 SRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS61NVP204818A-166TQLI | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS61NVP25636A-200B2LI | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS61NVP25636A-200B3LI | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS61NVP25636A-200TQI | 功能描述:静态随机存取存储器 8Mb 256Kx36 200Mhz 2.5v I/O RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61NVP25636A-200TQI-TR | 功能描述:静态随机存取存储器 8Mb 256Kx36 200Mhz 2.5v I/O RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
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