- 您现在的位置：买卖IC网 > PDF目录299228 > IS61SF25616-11B (INTEGRATED SILICON SOLUTION INC) 256K X 16 CACHE SRAM, 11 ns, PBGA119 PDF资料下载
参数资料
| 型号： | IS61SF25616-11B |
| 厂商： | INTEGRATED SILICON SOLUTION INC |
| 元件分类： | SRAM |
| 英文描述： | 256K X 16 CACHE SRAM, 11 ns, PBGA119 |
| 封装： | PLASTIC, BGA-119 |
| 文件页数： | 10/14页 |
| 文件大小： | 147K |
| 代理商： | IS61SF25616-11B |
IS61SF25616
Integrated Silicon Solution, Inc. — 1-800-379-4774
5
PRELIMINARY SR056-1A
05/24/99
ISSI
INTERLEAVED BURST ADDRESS TABLE (MODE = VCCQ or No Connect)
External Address
1st Burst Address
2nd Burst Address
3rd Burst Address
A1 A0
00
01
10
11
01
00
11
10
11
00
01
11
10
01
00
LINEAR BURST ADDRESS TABLE (MODE = GNDQ)
0,0
1,0
0,1
A1', A0' = 1,1
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameter
Value
Unit
TBIAS
Temperature Under Bias
–40 to +85
°C
TSTG
Storage Temperature
–55 to +150
°C
PD
Power Dissipation
1.6
W
IOUT
Output Current (per I/O)
100
mA
VIN, VOUT Voltage Relative to GND for I/O Pins
–0.5 to VCCQ + 0.3
V
VIN
Voltage Relative to GND for
–0.5 to VCC + 0.5
V
for Address and Control Inputs
VCC
Voltage on Vcc Supply Relatiive to GND
–0.5 to 4.6
V
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2. This device contains circuity to protect the inputs against damage due to high static
voltages or electric fields; however, precautions may be taken to avoid application of
any voltage higher than maximum rated voltages to this high-impedance circuit.
3. This device contains circuitry that will ensure the output devices are in High-Z at power
up.
相关PDF资料 |
PDF描述 |
|---|---|
| IS61SF25616-8.5TQ | 256K X 16 CACHE SRAM, 8.5 ns, PQFP100 |
| IS61VPD10018-200BI | 1M X 18 CACHE SRAM, 3.1 ns, PBGA119 |
| IS62VV51216LL-70MI | 512K X 16 STANDARD SRAM, 70 ns, PBGA48 |
| IS63LV1024-10K | 128K X 8 STANDARD SRAM, 10 ns, PDSO32 |
| IS63LV1024-8KL | 128K X 8 STANDARD SRAM, 8 ns, PDSO32 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS61SF25618-8.5TQI | 制造商:Integrated Silicon Solution Inc 功能描述:SRAM Chip Sync Single 3.3V 4.5M-Bit 256K x 18 8.5ns 100-Pin TQFP |
| IS61SF25618-8.5TQI-TR | 制造商:Integrated Silicon Solution Inc 功能描述:SRAM Chip Sync Single 3.3V 4.5M-Bit 256K x 18 8.5ns 100-Pin TQFP T/R |
| IS61SF51218T-10TQ | 制造商:Integrated Silicon Solution Inc 功能描述:SRAM Chip Sync Single 3.3V 8M-Bit 512K x 16 10ns 100-Pin TQFP |
| IS61SP12836-133B | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS61SP12836-133TQ-T | 制造商:Integrated Silicon Solution Inc 功能描述:SRAM Chip Sync Quad 3.3V 4.5M-Bit 128K x 36 4ns 100-Pin TQFP T/R |
发布紧急采购，3分钟左右您将得到回复。