参数资料
型号: IS61SF25616-11B
厂商: INTEGRATED SILICON SOLUTION INC
元件分类: SRAM
英文描述: 256K X 16 CACHE SRAM, 11 ns, PBGA119
封装: PLASTIC, BGA-119
文件页数: 12/14页
文件大小: 147K
代理商: IS61SF25616-11B
IS61SF25616
Integrated Silicon Solution, Inc. — 1-800-379-4774
7
PRELIMINARY SR056-1A
05/24/99
ISSI
CAPACITANCE(1,2)
Symbol
Parameter
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 0V
5
pF
COUT
Input/Output Capacitance
VOUT = 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25
°C, f = 1 MHz, Vcc = 3.3V.
AC TEST CONDITIONS
Parameter
Unit
Input Pulse Level
0V to 3V
Input Rise and Fall Times
1.5 ns
Input and Output Timing
1.5V
and Reference Level
Output Load
See Figures 1 and 2
AC TEST LOADS
Figure 2
317
5 pF
Including
jig and
scope
351
OUTPUT
3.3V
Figure 1
Output
Buffer
ZO = 50
1.5V
50
30 pF
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