参数资料
型号: IS61SPS25632D-5TQ
厂商: INTEGRATED SILICON SOLUTION INC
元件分类: SRAM
英文描述: 256K X 32 CACHE SRAM, 5 ns, PQFP100
封装: TQFP-100
文件页数: 3/22页
文件大小: 152K
代理商: IS61SPS25632D-5TQ
Integrated Silicon Solution, Inc. — 1-800-379-4774
11
PRELIMINARY INFORMATION
Rev. 00A
04/17/01
IS61SPS25632T/D
IS61LPS25632T/D
IS61SPS25636T/D
IS61LPS25636T/D
IS61SPS51218T/D
IS61LPS51218T/D
ISSI
OPERATING RANGE
Range
Ambient Temperature
VCC
VCCQ
Commercial
0°C to +70°C
3.3V,
+10%, –5%
2.375
3.6V
Industrial
–40°C to +85°C
3.3V,
+10%, –5%
2.375
3.6V
DC ELECTRICAL CHARACTERISTICS(1) (Over Operating Range)
Symbol Parameter
Test Conditions
Min.
Max.
Unit
VOH
Output HIGH Voltage
IOH = –2.0 mA, VCCQ = 2.5V
1.7
V
IOH = –4.0 mA, VCCQ = 3.3V
2.4
V
VOL
Output LOW Voltage
IOL = 2.0 mA, VCCQ = 2.5V
0.7
V
IOL = 8.0 mA, VCCQ = 3.3V
0.4
V
VIH
Input HIGH Voltage
VCCQ = 2.5V
1.7
VCCQ + 0.3
V
VCCQ = 3.3V
2.0
VCCQ + 0.3
V
VIL
Input LOW Voltage
VCCQ = 2.5V
–0.3
0.7
V
VCCQ = 3.3V
–0.3
0.8
V
ILI
Input Leakage Current
GND
≤ VIN ≤ VCCQ(2)
Com.
–22
A
Ind.
–55
ILO
Output Leakage Current
GND
≤ VOUT ≤ VCCQ, OE = VIH Com.
–22
A
Ind.
–55
POWER SUPPLY CHARACTERISTICS (Over Operating Range)
-166*
-150
-133
-100
Symbol Parameter
Test Conditions
Max.
Unit
ICC
AC Operating
Device Selected,
Com.
400
370
350
300
mA
Supply Current
All Inputs = VIL or VIH
Ind.
400
380
330
mA
OE = VIH, Vcc = Max.
Cycle Time
≥ tKC min.
ISB
Standby Current
Device Deselected,
Com.
110
105
90
80
mA
VCC = Max.,
Ind.
110
95
85
mA
All Inputs = VIH or VIL
CLK Cycle Time
≥ tKC min.
*This speed available only in SPS version
Notes:
1. The MODE pin has an internal pullup. This pin may be a No Connect, tied to GND, or tied to VCC.
2. The MODE pin should be tied to Vcc or GND. It exhibits ±10 A maximum leakage current when tied to - GND + 0.2V
or
≥ Vcc – 0.2V.
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