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参数资料
| 型号： | ISL2111ABZ |
| 厂商： | Intersil |
| 文件页数： | 4/13页 |
| 文件大小： | 0K |
| 描述： | IC MSFT DVR HALF-BRG 100V 8-SOIC |
| 标准包装： | 98 |
| 配置： | 半桥 |
| 输入类型： | 非反相 |
| 延迟时间： | 38ns |
| 电流 - 峰： | 3A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 100V |
| 电源电压： | 8 V ~ 14 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
| 产品目录页面： | 1240 (CN2011-ZH PDF) |
ISL2110, ISL2111
Absolute Maximum Ratings
Thermal Information
Supply Voltage, V DD, V HB - V HS (Notes 4, 5) . . . . . . . . -0.3V to 18V
Thermal Resistance (Typical)
θ JA (°C/W)
θ JC (°C/W)
LI and HI Voltages (Note 5) . . . . . . . . . . . . . . . . -0.3V to V DD + 0.3V
Voltage on LO (Note 5) . . . . . . . . . . . . . . . . . . . -0.3V to V DD + 0.3V
Voltage on HO (Note 5) . . . . . . . . . . . . . . V HS - 0.3V to V HB + 0.3V
Voltage on HS (Continuous) (Note 5) . . . . . . . . . . . . . . -1V to 110V
Voltage on HB (Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118V
Average Current in V DD to HB Diode . . . . . . . . . . . . . . . . . . 100mA
Maximum Recommended Operating Conditions
Supply Voltage, V DD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V to 14V
Voltage on HS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1V to 100V
Voltage on HS . . . . . . . . . . . . . . .(Repetitive Transient) -5V to 105V
Voltage on HB. . . . .V HS +7V to V HS +14V and V DD - 1V to V DD +100V
HS Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <50V/ns
8 Ld SOIC (Notes 6, 10). . . . . . . . . . . . 95 46
10 Ld TDFN (Notes 7, 8) . . . . . . . . . . . 42 5.5
12 Ld DFN (Notes 7, 8) . . . . . . . . . . . . 40 5.5
8 Ld DFN (Notes 7, 8) . . . . . . . . . . . . . 40 4.0
Max Power Dissipation at +25°C in Free Air
8 Ld SOIC (Notes 6, 10) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3W
10 Ld TDFN (Notes 7, 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0W
12 Ld DFN (Notes 7, 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.1W
8 Ld DFN (Notes 7, 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.1W
Storage Temperature Range . . . . . . . . . . . . . . . . . . . -65°C to +150°C
Junction Temperature Range. . . . . . . . . . . . . . . . . .-55°C to +150°C
Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
NOTES:
4. The ISL2110 and ISL2111 are capable of derated operation at supply voltages exceeding 14V. Figure 22 shows the high-side voltage derating
curve for this mode of operation.
5. All voltages referenced to V SS unless otherwise specified.
6. θ JA is measured in free air with the component mounted on a high effective thermal conductivity test board. See Tech Brief TB379 for details.
7. θ JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See
Tech Brief TB379.
8. For θ JC , the “case temp” location is the center of the exposed metal pad on the package underside.
9. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization
and are not production tested.
10. For θ JC , the “case temp” location is taken at the package top center.
Electrical Specifications
V DD = V HB = 12V, V SS = V HS = 0V, No Load on LO or HO, unless otherwise specified.
T J = +25°C
T J = -40°C to +125°C
MIN
MAX
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
(Note 9)
(Note 9)
UNITS
SUPPLY CURRENTS
V DD Quiescent Current
V DD Quiescent Current
V DD Operating Current
V DD Operating Current
Total HB Quiescent Current
Total HB Operating Current
HB to V SS Current, Quiescent
HB to V SS Current, Operating
I DD
I DD
I DDO
I DDO
I HB
I HBO
I HBS
I HBSO
ISL2110; LI = HI = 0V
ISL2111; LI = HI = 0V
ISL2110; f = 500kHz
ISL2111; f = 500kHz
LI = HI = 0V
f = 500kHz
LI = HI = 0V; V HB = V HS = 114V
f = 500kHz; V HB = V HS = 114V
-
-
-
-
-
-
-
-
0.1
0.3
3.4
3.5
0.1
3.4
0.05
1.2
0.25
0.45
5.0
5.0
0.15
5.0
1.5
-
-
-
-
-
-
-
-
-
0.3
0.55
5.5
5.5
0.2
5.5
10
-
mA
mA
mA
mA
mA
mA
μA
mA
INPUT PINS
Low Level Input Voltage Threshold
Low Level Input Voltage Threshold
High Level Input Voltage Threshold
High Level Input Voltage Threshold
Input Voltage Hysteresis
Input Pull-Down Resistance
V IL
V IL
V IH
V IH
V IHYS
R I
ISL2110
ISL2111
ISL2110
ISL2111
ISL2110
3.7
1.4
-
-
-
-
4.4
1.8
6.6
1.8
2.2
210
-
-
7.4
2.2
-
-
3.5
1.2
-
-
-
100
-
-
7.6
2.4
-
500
V
V
V
V
V
k Ω
4
FN6295.6
March 8, 2012
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| ISL2111ABZ-T | 功能描述:功率驱动器IC 100V/4A H-BRDG DRVR 8LD TTL INPUTS T RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| ISL2111AR4Z | 功能描述:功率驱动器IC 100V/4A H-BRDG DRVR 12LD 4X4 TTL INPUT RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| ISL2111AR4Z-T | 功能描述:功率驱动器IC 100V/4A H-BRDG DRVR 12LD 4X4 TTL INPUT RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| ISL2111ARTZ | 功能描述:功率驱动器IC 100V/4A H-BRDG DRVR 10LD 4X4 TTL INPU RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| ISL2111ARTZ-T | 功能描述:功率驱动器IC 100V/4A H-BRDG DRVR 10LD 4X4 TTL INPU RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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