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| 型号： | ISL55110IRZ |
| 厂商： | Intersil |
| 文件页数： | 1/18页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER DUAL HS 16-QFN |
| 标准包装： | 75 |
| 类型： | 高端 |
| 输入类型： | 非反相 |
| 输出数： | 2 |
| 导通状态电阻： | 3 欧姆 |
| 电流 - 输出 / 通道： | 100mA |
| 电流 - 峰值输出： | 3.5A |
| 电源电压： | 5 V ~ 13.2 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-VFQFN 裸露焊盘 |
| 供应商设备封装： | 16-QFN-EP（4x4） |
| 包装： | 管件 |
| 产品目录页面： | 1241 (CN2011-ZH PDF) |
Dual, High Speed MOSFET Driver
ISL55110, ISL55111
The ISL55110 and ISL55111 are dual high speed MOSFET
drivers intended for applications requiring accurate pulse
generation and buffering. Target applications include
ultrasound, CCD imaging, automotive piezoelectric distance
sensing and clock generation circuits.
With a wide output voltage range and low ON-resistance, these
devices can drive a variety of resistive and capacitive loads
with fast rise and fall times, allowing high speed operation
with low skew, as required in large CCD array imaging
applications.
The ISL55110 and ISL55111 are compatible with 3.3V and 5V
logic families and incorporate tightly controlled input
thresholds to minimize the effect of input rise time on output
pulse width. The ISL55110 has a pair of in-phase drivers while
the ISL55111 has two drivers operating in antiphase.
The ISL55110 has a power-down mode for low power
consumption during equipment standby times, making it ideal
for portable products.
The ISL55110 and ISL55111 are available in 16 Ld Exposed
Features
? 5V to 12V Pulse Magnitude
? High Current Drive 3.5A
? 6ns Minimum Pulse Width
? 1.5ns Rise and Fall Times, 100pF Load
? Low Skew
? 3.3V and 5V Logic Compatible
? In-Phase and Anti-Phase Outputs
? Small QFN and TSSOP Packaging
? Low Quiescent Current
? Pb-Free (RoHS Compliant)
Applications
? Ultrasound MOSFET Driver
? CCD Array Horizontal Driver
? Automotive Piezo Driver Applications
? Clock Driver Circuits
pad QFN packaging and 8 Ld TSSOP. Both devices are
specified for operation over the full -40°C to +85°C
temperature range.
Functional Block Diagram
ISL55110 AND ISL55111 DUAL DRIVER
o
o
o
o
VDD
IN-A
HIZ-QFN*
IN-B
VH
OA
OB
o
o
o
*
GND
o
o
POWER DOWN
*HIZ AVAILABLE IN QFN PACKAGE ONLY
*ISL55111 IN-B IS INVERTING
August 8, 2013
FN6228.6
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2006-2008, 2011-2013. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
相关PDF资料 |
PDF描述 |
|---|---|
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ISL55110IRZ-T | 功能描述:功率驱动器IC W/ANNEAL ULTRASOUND DRVR 16LD 4X4 RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| ISL55110IRZ-T7A | 功能描述:功率驱动器IC W/ANNEAL ULTRASOUND DRVR 16LD 4X4 RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| ISL55110IVZ | 功能描述:功率驱动器IC ULTRASOUND DRVR IN 8LD RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| ISL55110IVZ-T | 功能描述:功率驱动器IC ULTRASOUND DRVR IN 8LD RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| ISL55110IVZ-T7A | 功能描述:功率驱动器IC ULTRASOUND DRVR IN 8LD RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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