参数资料
| 型号： | ISL6227IRZ |
| 厂商： | Intersil |
| 文件页数： | 25/27页 |
| 文件大小： | 0K |
| 描述： | IC CONTROLLER DDR, DDR2 28QFN |
| 标准包装： | 60 |
| 应用： | 控制器，DDR，DDR2 |
| 输入电压： | 5 V ~ 28 V |
| 输出数： | 2 |
| 输出电压： | 0.9 V ~ 5.5 V |
| 工作温度： | -40°C ~ 100°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 28-VFQFN 裸露焊盘 |
| 供应商设备封装： | 28-QFN 裸露焊盘（5x5） |
| 包装： | 管件 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页当前第25页第26页第27页
ISL6227
PHASE1 and PHASE2
These traces should be short, and positioned away from other
weak signal traces. The phase node has a very high dv/dt with
a voltage swing from the input voltage to ground. No trace
should be in parallel with these traces. These traces are also
the return path for UGATE1 and UGATE2. Connect these pins
to the respective converter’s upper MOSFET source.
Pin 5 and Pin 24, the UGATE1 and UGATE2
These pins have a square shape waveform with high dv/dt. It
provides the gate drive current to charge and discharge the
top MOSFET with high di/dt. This trace should wide, short,
and away from other traces similar to the LGATEx.
BOOT1 and BOOT2
These pins di/dt are as high as that of the UGATEx;
therefore, the traces should be as short as possible.
ISEN1 and ISEN2
The ISEN trace should be a separate trace, and
independently go to the drain terminal of the lower MOSFET.
The current sense resistor should be close to ISEN pin.
The loop formed by the bottom MOSFET, output inductor,
and output capacitor, should be very small. The source of
the bottom MOSFET should tie to the negative side of the
output capacitor in order for the current sense pin to get the
voltage drop on the r DS(ON) .
EN1 and EN2
These pins stay high in enable mode and low in idle mode
and are relatively robust. Enable signals should refer to the
signal ground.
PG1 and PG2/REF
For dual switcher operations, these two lines are less noise
sensitive. For DDR applications, a capacitor should be
placed to the PG2/REF pin.
DDR
This pin should connect to VCC in DDR applications, and to
signal ground in dual switcher applications.
VIN
This pin connects to battery voltage, and is less noise sensitive.
Copper Size for the Phase Node
Big coppers on both sides of the Phase node introduce
parasitic capacitance. The capacitance of PHASE should be
kept very low to minimize ringing. If ringing is excessive, it
could easily affect current sample information. It would be
best to limit the size of the PHASE node copper in strict
accordance with the current and thermal management of the
application.
Identify the Power and Signal Ground
The input and output capacitors of the converters, the source
terminals of the bottom switching MOSFET PGND1, and
PGND2, should be closely connected to the power ground.
The other components should connect to signal ground.
Signal and power ground are tied together at the negative
terminal of the output capacitors.
Decoupling Capacitor for Switching MOSFET
It is recommended that ceramic caps be used closely
connected to the drain side of the upper MOSFET, and the
source of the lower MOSFET. This capacitor reduces the
noise and the power loss of the MOSFET. Refer to Figure 43
for the power component placement. IN
VOUT1 and VOUT2
These pins connect either to the output voltage or to the
signal ground. They are signal lines and should be kept
away from noisy lines.
VSEN1 and VSEN2
- - VIN
.
1
+ +
8
There is usually a resistor divider connecting the output
voltage to this pin. The input impedance of these two pins is
high because they are the input to the amplifiers. The correct
layout should bring the output voltage from the regulation
point to the SEN pin with kelvin traces. Build the resistor
V o V
- -
O
+ +
OUTPUT
CAP
2
3
4
SI4816DY
7
6
5
divider close to the pin so that the high impedance trace is
shorter.
L o
L o
OCSET1 and OCSET2
In dual switcher mode operation, the overcurrent set resistor
should be put close to this pin. In DDR mode operation, the
voltage divider, which divides the VDQQ voltage in half,
should be put very close to this pin. The other side of the OC
set resistor should connect to signal ground.
SOFT1 and SOFT2
The soft-start capacitors should be laid out close to this pin.
The other side of the soft-start cap should tie to signal ground.
25
INDUCTOR
L O
FIGURE 43. A GOOD EXAMPLE POWER COMPONENT
REPLACEMENT. IT SHOWS THE NEGATIVE OF INPUT
AND OUTPUT CAPACITOR AND SOURCE OF THE
MOSFET ARE TIED AT ONE POINT.
FN9094.7
May 4, 2009
相关PDF资料 |
PDF描述 |
|---|---|
| 80MXC5600MEFCSN35X40 | CAP ALUM 5600UF 80V 20% SNAP-IN |
| EL5126CLZ-T13 | IC VOLTAGE GEN 8CH TFT-LCD 32QFN |
| 250MXC1000MEFCSN35X35 | CAP ALUM 1000UF 250V 20% SNAP-IN |
| EL5126CLZ-T7 | IC VOLTAGE GEN 8CH TFT-LCD 32QFN |
| 400SXC330MEFCSN30X45 | CAP ALUM 330UF 400V 20% SNAP-IN |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ISL6227IRZ-T | 功能描述:IC CONTROLLER DDR, DDR2 28QFN RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - 专用型 系列:- 标准包装:43 系列:- 应用:控制器，Intel VR11 输入电压:5 V ~ 12 V 输出数:1 输出电压:0.5 V ~ 1.6 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:48-VFQFN 裸露焊盘 供应商设备封装:48-QFN（7x7） 包装:管件 |
| ISL6228 | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:High-Performance Dual-Output Buck Controller for Notebook Applications |
| ISL6228EVAL3Z | 功能描述:EVALUATION BOARD FOR ISL6228 RoHS:是 类别:编程器，开发系统 >> 评估板 - DC/DC 与 AC/DC（离线）SMPS 系列:Robust Ripple Regulator™ (R³) 产品培训模块:Obsolescence Mitigation Program 标准包装:1 系列:True Shutdown™ 主要目的:DC/DC，步升 输出及类型:1，非隔离 功率 - 输出:- 输出电压:- 电流 - 输出:1A 输入电压:2.5 V ~ 5.5 V 稳压器拓扑结构:升压 频率 - 开关:3MHz 板类型:完全填充 已供物品:板 已用 IC / 零件:MAX8969 |
| ISL6228HIEVAL3Z | 功能描述:EVALUATION BOARD FOR ISL6228HI RoHS:是 类别:编程器，开发系统 >> 评估板 - DC/DC 与 AC/DC（离线）SMPS 系列:Robust Ripple Regulator™ (R³) 产品培训模块:Obsolescence Mitigation Program 标准包装:1 系列:True Shutdown™ 主要目的:DC/DC，步升 输出及类型:1，非隔离 功率 - 输出:- 输出电压:- 电流 - 输出:1A 输入电压:2.5 V ~ 5.5 V 稳压器拓扑结构:升压 频率 - 开关:3MHz 板类型:完全填充 已供物品:板 已用 IC / 零件:MAX8969 |
| ISL6228HRTZ | 功能描述:IC REG CTRLR BUCK PWM 28-TQFN RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:Robust Ripple Regulator™ (R³) 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,500 系列:- PWM 型:电流模式 输出数:1 频率 - 最大:275kHz 占空比:50% 电源电压:18 V ~ 110 V 降压:无 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:是 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 包装:带卷 (TR) |
发布紧急采购，3分钟左右您将得到回复。