参数资料
| 型号： | ISL6265HRTZ-T |
| 厂商： | Intersil |
| 文件页数： | 21/24页 |
| 文件大小： | 0K |
| 描述： | IC CTLR MULTI-OUTPUT 48-TQFN |
| 标准包装： | 4,000 |
| 应用： | 控制器，AMD SVI 兼容移动式 CPU |
| 输入电压： | 5 V ~ 24 V |
| 输出数： | 3 |
| 输出电压： | 0.5 V ~ 1.55 V |
| 工作温度： | -10°C ~ 100°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 48-WFQFN 裸露焊盘 |
| 供应商设备封装： | 48-TQFN-EP（6x6） |
| 包装： | 带卷 (TR) |
ISL6265
0.60
0.55
0.50
0.45
0.40
I P-P,N = 1
I P-P,N = 0.50
I P-P,N = 0
I P-P,N = 0.75
In addition to the bulk capacitance, some low ESL ceramic
capacitance is recommended to decouple between the drain
of the high-side MOSFET and the source of the low-side
MOSFET.
MOSFET Selection and Considerations
0.35
The choice of MOSFETs depends on the current each
0.30
0.25
0.20
0.15
0.10
0.05
I P-P,N = 0.25
MOSFET will be required to conduct, the switching
frequency, the capability of the MOSFETs to dissipate heat,
and the availability and nature of heat sinking and air flow.
Typically, a MOSFET cannot tolerate even brief excursions
beyond their maximum drain to source voltage rating. The
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
DUTY CYCLE (V IN/ V O )
FIGURE 11. NORMALIZED RMS INPUT CURRENT FOR
SINGLE PHASE CONVERTER
The normalized RMS current calculation is written as
Equation 22:
1.0
MOSFETs used in the power stage of the converter should
have a maximum V DS rating that exceeds the sum of the
upper voltage tolerance of the input power source and the
voltage spike that occurs when the MOSFETs switch.
There are several power MOSFETs readily available that are
optimized for DC/DC converter applications. The preferred
high-side MOSFET emphasizes low gate charge so that the
D ? ( 1 – D ) + ? ------ ? ? I PP , N
I IN_RMS , N =
D
? 12 ?
2
(EQ. 22)
device spends the least amount of time dissipating power in
the linear region. The preferred low-side MOSFET
P CON_LS ≈ I LOAD ? r DS ( ON ) _LS ? ( 1 – D )
Where:
- I MAX is the maximum continuous I LOAD of the converter
- I PP,N is the ratio of inductor peak-to-peak ripple current
to I MAX
- D is the duty cycle that is adjusted to take into account
the efficiency of the converter which is written as:
emphasizes low r DS(ON) when fully saturated to minimize
conduction loss.
For the low-side (LS) MOSFET, the power loss can be
assumed to be conductive only and is written as Equation 24:
2
(EQ. 24)
V O
V IN ? η
D = ------------------
(EQ. 23)
For the high-side (HS) MOSFET, the its conduction loss is
written as Equation 25:
- where η is converter efficiency
P CON_HS = I LOAD
2
?
r DS ( ON ) _HS ? D
(EQ. 25)
Figure 12 provides the same input RMS current information
for two-phase designs.
For the high-side MOSFET, the switching loss is written as
Equation 26:
P SW_HS = ----------------------------------------------------------------- + -------------------------------------------------------------
0.3
V IN ? I VALLEY ? t ON ? f SW V IN ? I PEAK ? t OFF ? f SW
2 2
(EQ. 26)
0.2
I P-P,N = 0.5
Where:
- I VALLEY is the difference of the DC component of the
inductor current minus 1/2 of the inductor ripple current
0.1
I P-P,N = 0.75
I P-P,N = 0
- I PEAK is the sum of the DC component of the inductor
current plus 1/2 of the inductor ripple current
- t ON is the time required to drive the device into
saturation
0
0
0.2
0.4 0.6
DUTY CYCLE (V IN/ V O )
0.8
1.0
- t OFF is the time required to drive the device into cut-off
Selecting The Bootstrap Capacitor
FIGURE 12. NORMALIZED RMS INPUT CURRENT FOR
2-PHASE CONVERTER
21
All three integrated drivers feature an internal bootstrap
schottky diode. Simply adding an external capacitor across
the BOOT and PHASE pins completes the bootstrap circuit.
The bootstrap function is also designed to prevent the
bootstrap capacitor from overcharging due to the large
negative swing at the PHASE node. This reduces voltage
stress on the BOOT and PHASE pins.
FN6599.1
May 13, 2009
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| ISL6266AEVAL1Z | 功能描述:EVAL BOARD 1 FOR ISL6266A RoHS:是 类别:编程器，开发系统 >> 评估板 - DC/DC 与 AC/DC（离线）SMPS 系列:* 产品培训模块:Obsolescence Mitigation Program 标准包装:1 系列:True Shutdown™ 主要目的:DC/DC，步升 输出及类型:1，非隔离 功率 - 输出:- 输出电压:- 电流 - 输出:1A 输入电压:2.5 V ~ 5.5 V 稳压器拓扑结构:升压 频率 - 开关:3MHz 板类型:完全填充 已供物品:板 已用 IC / 零件:MAX8969 |
| ISL6266AHRZ | 功能描述:IC CORE CTRLR 2PHASE 48-QFN RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - 专用型 系列:- 标准包装:43 系列:- 应用:控制器，Intel VR11 输入电压:5 V ~ 12 V 输出数:1 输出电压:0.5 V ~ 1.6 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:48-VFQFN 裸露焊盘 供应商设备封装:48-QFN（7x7） 包装:管件 |
| ISL6266AHRZ-T | 功能描述:IC CORE CTRLR 2PHASE 48-QFN RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - 专用型 系列:- 标准包装:43 系列:- 应用:控制器，Intel VR11 输入电压:5 V ~ 12 V 输出数:1 输出电压:0.5 V ~ 1.6 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:48-VFQFN 裸露焊盘 供应商设备封装:48-QFN（7x7） 包装:管件 |
| ISL6266AHRZ-TR5453 | 制造商:Intersil Corporation 功能描述:STD. ISL6266AHRZ-T W/GOLD BOND WIRE ONLY - Tape and Reel |
| ISL6266AIRZ | 功能描述:IC CORE CTRLR 2PHASE 48-QFN RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - 专用型 系列:- 标准包装:43 系列:- 应用:控制器，Intel VR11 输入电压:5 V ~ 12 V 输出数:1 输出电压:0.5 V ~ 1.6 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:48-VFQFN 裸露焊盘 供应商设备封装:48-QFN（7x7） 包装:管件 |
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