参数资料
| 型号： | ISL62873HRUZ-T |
| 厂商： | Intersil |
| 文件页数： | 15/17页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR BUCK PWM 16UTQFN |
| 标准包装： | 3,000 |
| 系列： | Robust Ripple Regulator™ (R³) |
| PWM 型： | 控制器 |
| 输出数： | 1 |
| 频率 - 最大： | 330kHz |
| 电源电压： | 3.3 V ~ 25 V |
| 降压： | 是 |
| 升压： | 无 |
| 回扫： | 无 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 无 |
| 工作温度： | -10°C ~ 100°C |
| 封装/外壳： | 16-UFQFN |
| 包装： | 带卷 (TR) |
ISL62873
.
2.0
1.8
1000
900
Q U = 100nC
Q L = 200nC
Q U = 50nC
Q L = 100nC
Q U = 50nC
Q L = 50nC
1.6
1.4
800
700
1.2
1.0
0.8
600
500
400
Q U = 20nC
Q L = 50nC
0.6
0.4
Q GATE = 100nC
300
200
20nC
0.2
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Δ V BOOT_CAP (V)
FIGURE 11. BOOT CAPACITANCE vs BOOT RIPPLE VOLTAGE
Driver Power Dissipation
100
0
0 200 400 600 800 1k 1.2k 1.4k 1.6k 1.8k
FREQUENCY (Hz)
FIGURE 12. POWER DISSIPATION vs FREQUENCY
MOSFET Selection and Considerations
2k
P = F sw ( 1.5V U Q + V L Q ) + P L + P U
(EQ. 30)
Switching power dissipation in the driver is mainly a function
of the switching frequency and total gate charge of the
selected MOSFETs. Calculating the power dissipation in the
driver for a desired application is critical to ensuring safe
operation. Exceeding the maximum allowable power
dissipation level will push the IC beyond the maximum
recommended operating junction temperature of +125°C.
When designing the application, it is recommended that the
following calculation be performed to ensure safe operation
at the desired frequency for the selected MOSFETs. The
power dissipated by the drivers is approximated as
Equation 30:
U L
Where:
- F sw is the switching frequency of the PWM signal
Typically, a MOSFET cannot tolerate even brief excursions
beyond their maximum drain to source voltage rating. The
MOSFETs used in the power stage of the converter should
have a maximum V DS rating that exceeds the sum of the
upper voltage tolerance of the input power source and the
voltage spike that occurs when the MOSFET switches off.
There are several power MOSFETs readily available that are
optimized for DC/DC converter applications. The preferred
high-side MOSFET emphasizes low switch charge so that
the device spends the least amount of time dissipating
power in the linear region. Unlike the low-side MOSFET
which has the drain-source voltage clamped by its body
diode during turn-off, the high-side MOSFET turns off with
V IN - V OUT , plus the spike, across it. The preferred low-side
MOSFET emphasizes low r DS(ON) when fully saturated to
minimize conduction loss.
P CON_LS ≈ I LOAD ? r DS ( ON ) _LS ? ( 1 – D )
-
-
-
V U is the upper gate driver bias supply voltage
V L is the lower gate driver bias supply voltage
Q U is the charge to be delivered by the upper driver into
the gate of the MOSFET and discrete capacitors
For the low-side MOSFET, (LS), the power loss can be
assumed to be conductive only and is written as Equation 31:
2
(EQ. 31)
P CON_HS = I LOAD ? r DS ( ON ) _HS ? D
- Q L is the charge to be delivered by the lower driver into
the gate of the MOSFET and discrete capacitors
- P L is the quiescent power consumption of the lower
driver
- P U is the quiescent power consumption of the upper
driver
15
For the high-side MOSFET, (HS), its conduction loss is
written as Equation 32:
2
(EQ. 32)
For the high-side MOSFET, its switching loss is written as
Equation 33:
V IN ? I VALLEY ? t ON ? F SW V IN ? I PEAK ? t OFF ? F SW
2 2
P SW_HS = ---------------------------------------------------------------------- + ------------------------------------------------------------------
(EQ. 33)
Where:
- I VALLEY is the difference of the DC component of the
inductor current minus 1/2 of the inductor ripple current
- I PEAK is the sum of the DC component of the inductor
current plus 1/2 of the inductor ripple current
FN6930.1
August 31, 2010
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| ISL62875HRUZ-T | 功能描述:IC REG CTRLR BUCK PWM 20UTQFN RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:Robust Ripple Regulator™ (R³) 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,500 系列:- PWM 型:电流模式 输出数:1 频率 - 最大:275kHz 占空比:50% 电源电压:18 V ~ 110 V 降压:无 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:是 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 包装:带卷 (TR) |
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