参数资料
型号: ISL6316CRZ-T
厂商: Intersil
文件页数: 14/29页
文件大小: 0K
描述: IC REG CTRLR BUCK PWM VM 40-QFN
标准包装: 4,000
PWM 型: 电压模式
输出数: 1
频率 - 最大: 275kHz
占空比: 66.7%
电源电压: 4.75 V ~ 5.25 V
降压:
升压:
回扫:
反相:
倍增器:
除法器:
Cuk:
隔离:
工作温度: 0°C ~ 70°C
封装/外壳: 40-VFQFN 裸露焊盘
包装: 带卷 (TR)
ISL6316
I ( s )
L
V IN
L
L
DCR
V OUT
L
I
R SENSE V OUT
C OUT
ISL6605
INDUCTOR
V L
V C (s)
C OUT
ISL6316 INTERNAL CIRCUIT
I n
R ISEN(n)
PWM(n)
R
C
SAMPLE
&
HOLD
ISEN-(n)
ISL6316 INTERNAL CIRCUIT
R ISEN(n)
+
-
ISEN+(n)
I n
SAMPLE
(PTC)
I
R
R SENSE
SEN = I L --------------------------
ISEN
&
HOLD
+
ISEN-(n)
FIGURE 5. SENSE RESISTOR IN SERIES WITH INDUCTORS
I SEN = I ------------------
L R
-
DCR
ISEN
ISEN+(n)
MOSFET r DS(ON) SENSING
The controller can also sense the channel load current by
sampling the voltage across the lower MOSFET r DS(ON) (see
Figure 6). The amplifier is ground-reference by connecting the
ISEN- pin to the source of the lower MOSFET. ISEN+ pin is
connected to the PHASE node through the current sense
FIGURE 4. DCR SENSING CONFIGURATION
With the internal low-offset current amplifier, the capacitor
voltage V C is replicated across the sense resistor R ISEN .
Therefore the current out of ISEN+ pin, I SEN , is proportional
resistor R ISEN . The voltage across R ISEN is equivalent to the
voltage drop across the r DS(ON) of the lower MOSFET while it
is conducting. The resulting current out of the ISEN+ pin is
proportional to the channel current I L.
I SEN = I ------------------------- ) -
L R
to the inductor current.
Equation 5 shows that the ratio of the channel current to the
sensed current I SEN is driven by the value of the sense
resistor and the DCR of the inductor.
I n
SAMPLE
r DS ( ON
ISEN
V IN
I L
I SEN = I L ? ------------------
DCR
R ISEN
RESISTIVE SENSING
(EQ. 5)
&
HOLD
-
ISEN+(n)
R ISEN
(PTC)
ISEN-(n)
-
I L x r DS ( ON )
+
For accurate current sense, a dedicated current-sense
resistor R SENSE in series with each output inductor can serve
as the current sense element (see Figure 5). This technique is
+
N-CHANNEL
MOSFETs
more accurate, but reduces overall converter efficiency due to
the additional power loss on the current sense element
ISL6316 INTERNAL CIRCUIT
EXTERNAL CIRCUIT
R SENSE .
Equation 6 shows the ratio of the channel current to the
sensed current I SEN .
FIGURE 6. MOSFET r DS(ON) CURRENT-SENSING CIRCUIT
Equation 7 shows the ratio of the channel current to the
sensed current I SEN .
I SEN = I L ? -----------------------
I SEN = I L ---------------------- )
R SENSE
R ISEN
(EQ. 6)
r DS ( ON
R ISEN
(EQ. 7)
Both inductor DCR and MOSFET r DS(ON) value will increase
as the temperature increases. Therefore the sensed current
will increase as the temperature of the current sense element
increases. In order to compensate the temperature effect on
the sensed current signal, a Positive Temperature Coefficient
(PTC) resistor can be selected for the sense resistor R ISEN ,
14
FN9227.1
December 12, 2006
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