参数资料
| 型号： | ISL6566ACRZ |
| 厂商： | Intersil |
| 文件页数： | 20/28页 |
| 文件大小： | 0K |
| 描述： | IC CTRLR PWM 3PHASE BUCK 40-QFN |
| 标准包装： | 500 |
| 应用： | 控制器，Intel VRM9，VRM10，AMD Hammer 应用 |
| 输入电压： | 3 V ~ 12 V |
| 输出数： | 1 |
| 输出电压： | 0.8 V ~ 1.6 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | * |
| 封装/外壳： | 40-VFQFN 裸露焊盘 |
| 供应商设备封装： | * |
| 包装： | 管件 |
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ISL6566A
I DR = ? --- ? Q G1 ? N
through the upper MOSFET across VIN. The power
dissipated as a result is P UP,3 .
P UP , 3 = V IN Q rr f S
(EQ. 19)
3
? 2
Q1
(EQ. 22)
?
+ Q G2 ? N Q2 ? ? N PHASE ? F SW + I Q
I PP2
? I M ?
P UP , 4 ≈ r DS ( ON ) ? ------ ? d + ----------
Finally, the resistive part of the upper MOSFET is given in
Equation 20 as P UP,4 .
2
(EQ. 20)
? N ? 12
The total power dissipated by the upper MOSFET at full load
can now be approximated as the summation of the results
from Equations 17, 18, 19 and 20. Since the power
equations depend on MOSFET parameters, choosing the
correct MOSFETs can be an iterative process involving
repetitive solutions to the loss equations for different
In Equations 21 and 22, P Qg_Q1 is the total upper gate drive
power loss and P Qg_Q2 is the total lower gate drive power
loss; the gate charge (Q G1 and Q G2 ) is defined at the
particular gate to source drive voltage PVCC in the
corresponding MOSFET data sheet; I Q is the driver total
quiescent current with no load at both drive outputs; N Q1
and N Q2 are the number of upper and lower MOSFETs per
phase, respectively; N PHASE is the number of active phases
being controlled by the internal ISL6566A drivers (can not be
greater then 2). The I Q* VCC product is the quiescent power
of the controller without capacitive load and is typically
75mW at 300kHz.
MOSFETs and different switching frequencies.
Package Power Dissipation
When choosing MOSFETs it is important to consider the
PVCC
BOOT
C GD
D
amount of power being dissipated in the integrated drivers
located in the controller. Since there are a total of three
drivers in the controller package, the total power dissipated
by all three drivers must be less than the maximum
allowable power dissipation for the QFN package.
R HI1
R LO1
UGATE
G
R G1
R GI1
C GS
S
C DS
Q1
Calculating the power dissipation in the drivers for a desired
application is critical to ensure safe operation. Exceeding the
maximum allowable power dissipation level will push the IC
beyond the maximum recommended operating junction
PHASE
FIGURE 15. TYPICAL UPPER-GATE DRIVE TURN-ON PATH
PVCC
temperature of 125°C. The maximum allowable IC power
dissipation for the 6x6 QFN package is approximately 4W at
room temperature. See Layout Considerations paragraph for
thermal transfer improvement suggestions.
R HI2
LGATE
G
C GD
D
C DS
When designing the ISL6566A into an application, it is
R LO2
R G2
R GI2
recommended that the following calculation is used to
ensure safe operation at the desired frequency for the
selected MOSFETs. The total gate drive power losses,
C GS
S
Q2
P Qg_TOT , due to the gate charge of MOSFETs and the
integrated driver ’s internal circuitry and their corresponding
average driver current can be estimated with Equations 21
and 22, respectively.
FIGURE 16. TYPICAL LOWER-GATE DRIVE TURN-ON PATH
The total gate drive power losses are dissipated among the
resistive components along the transition path and in the
P Qg_Q1 = --- ? Q G1 ? PVCC ? F SW ? N Q1 ? N PHASE
P Qg_TOT = P Qg_Q1 + P Qg_Q2 + I Q ? VCC
3
2
P Qg_Q2 = Q G2 ? PVCC ? F SW ? N Q2 ? N PHASE
20
(EQ. 21)
bootstrap diode. The portion of the total power dissipated in
the controller itself is the power dissipated in the upper drive
path resistance, P DR_UP , the lower drive path resistance,
P DR_UP , and in the boot strap diode, P BOOT . The rest of the
power will be dissipated by the external gate resistors (R G1
and R G2 ) and the internal gate resistors (R GI1 and R GI2 ) of
the MOSFETs. Figures 15 and 16 show the typical upper
and lower gate drives turn-on transition path. The total power
FN9200.2
July 27, 2005
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ISL6566ACRZ-T | 功能描述:IC CTRLR PWM 3PHASE BUCK 40-QFN RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - 专用型 系列:- 标准包装:43 系列:- 应用:控制器，Intel VR11 输入电压:5 V ~ 12 V 输出数:1 输出电压:0.5 V ~ 1.6 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:48-VFQFN 裸露焊盘 供应商设备封装:48-QFN（7x7） 包装:管件 |
| ISL6566AIRZ | 功能描述:IC CTRLR PWM 3PHASE BUCK 40-QFN RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - 专用型 系列:- 标准包装:43 系列:- 应用:控制器，Intel VR11 输入电压:5 V ~ 12 V 输出数:1 输出电压:0.5 V ~ 1.6 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:48-VFQFN 裸露焊盘 供应商设备封装:48-QFN（7x7） 包装:管件 |
| ISL6566AIRZ-T | 功能描述:IC CTRLR PWM 3PHASE BUCK 40-QFN RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - 专用型 系列:- 标准包装:43 系列:- 应用:控制器，Intel VR11 输入电压:5 V ~ 12 V 输出数:1 输出电压:0.5 V ~ 1.6 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:48-VFQFN 裸露焊盘 供应商设备封装:48-QFN（7x7） 包装:管件 |
| ISL6566CR | 功能描述:IC CTRLR PWM BUCK 3PHASE 40-QFN RoHS:否 类别:集成电路 (IC) >> PMIC - 稳压器 - 专用型 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,000 系列:- 应用:电源，ICERA E400，E450 输入电压:4.1 V ~ 5.5 V 输出数:10 输出电压:可编程 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:42-WFBGA，WLCSP 供应商设备封装:42-WLP 包装:带卷 (TR) |
| ISL6566CRR5184 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Intersil Corporation 功能描述: |
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